Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation
We propose a high-temperature-operation (HTOT) SOI MOSFET and show preliminary simulation results of its characteristics. It is demonstrated that HTOT SOI MOSFET operates safely at 700 K with no thermal instability because of its expanded effective bandgap. It is shown that its threshold voltage is...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2011-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2011/850481 |
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