Bifunctional Memristive Behavior of a Dual‐Layer Structure Depending on the Configuration of Charge Transport
Abstract This paper presents a method for integrating neuronal and synaptic functions within a thin dual‐layer featuring distinct dielectric strengths. The dual‐layer consists of a conductive bottom layer (e.g., MXenes or rGOs) and a top layer with a lower dielectric strength (e.g., gallium oxide)....
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-08-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202500029 |
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| _version_ | 1849243702362374144 |
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| author | Suji Ha YoungJu Park Chanjin Lim Eunyeong Yang Taegil Kim Seon Joon Kim Junwoo Park |
| author_facet | Suji Ha YoungJu Park Chanjin Lim Eunyeong Yang Taegil Kim Seon Joon Kim Junwoo Park |
| author_sort | Suji Ha |
| collection | DOAJ |
| description | Abstract This paper presents a method for integrating neuronal and synaptic functions within a thin dual‐layer featuring distinct dielectric strengths. The dual‐layer consists of a conductive bottom layer (e.g., MXenes or rGOs) and a top layer with a lower dielectric strength (e.g., gallium oxide). The differing dielectric strengths between the layers facilitate the modulation of breakdown, as the magnitude of the electric field applied in one layer varies with the configuration of charge transport in the other layer. In a vertical configuration, the dual‐layer exhibits volatile and abrupt switching (neuronal behavior), while in a horizontal configuration, it demonstrates non‐volatile and gradual changes in conductance (synaptic behavior). The experimental results indicate that the abrupt switching is attributed to filament formation, while the gradual change in conductance arises from charge transport in gallium oxide. The dual‐layer shows the characteristics of integrate‐and‐fire depending on spiking signals with synaptic plasticity and achieves training accuracies of 91.4% and 82.3% for MNIST digit classification based on MXene and rGO, respectively. |
| format | Article |
| id | doaj-art-de3b183e8bee4aa8a534fd80d101313d |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-08-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-de3b183e8bee4aa8a534fd80d101313d2025-08-20T03:59:22ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-08-011112n/an/a10.1002/aelm.202500029Bifunctional Memristive Behavior of a Dual‐Layer Structure Depending on the Configuration of Charge TransportSuji Ha0YoungJu Park1Chanjin Lim2Eunyeong Yang3Taegil Kim4Seon Joon Kim5Junwoo Park6Department of Chemistry Sogang University Seoul 04107 Republic of KoreaDepartment of Chemistry Sogang University Seoul 04107 Republic of KoreaDepartment of Chemistry Sogang University Seoul 04107 Republic of KoreaConvergence Research Center for Solutions to Electromagnetic Interference in Future‐mobility Korea Institute of Science and Technology Seoul 02792 Republic of KoreaDepartment of Chemistry Sogang University Seoul 04107 Republic of KoreaConvergence Research Center for Solutions to Electromagnetic Interference in Future‐mobility Korea Institute of Science and Technology Seoul 02792 Republic of KoreaDepartment of Chemistry Sogang University Seoul 04107 Republic of KoreaAbstract This paper presents a method for integrating neuronal and synaptic functions within a thin dual‐layer featuring distinct dielectric strengths. The dual‐layer consists of a conductive bottom layer (e.g., MXenes or rGOs) and a top layer with a lower dielectric strength (e.g., gallium oxide). The differing dielectric strengths between the layers facilitate the modulation of breakdown, as the magnitude of the electric field applied in one layer varies with the configuration of charge transport in the other layer. In a vertical configuration, the dual‐layer exhibits volatile and abrupt switching (neuronal behavior), while in a horizontal configuration, it demonstrates non‐volatile and gradual changes in conductance (synaptic behavior). The experimental results indicate that the abrupt switching is attributed to filament formation, while the gradual change in conductance arises from charge transport in gallium oxide. The dual‐layer shows the characteristics of integrate‐and‐fire depending on spiking signals with synaptic plasticity and achieves training accuracies of 91.4% and 82.3% for MNIST digit classification based on MXene and rGO, respectively.https://doi.org/10.1002/aelm.202500029artificial neuronartificial synapsecharge transportconductance switchingneuromorphic computing |
| spellingShingle | Suji Ha YoungJu Park Chanjin Lim Eunyeong Yang Taegil Kim Seon Joon Kim Junwoo Park Bifunctional Memristive Behavior of a Dual‐Layer Structure Depending on the Configuration of Charge Transport Advanced Electronic Materials artificial neuron artificial synapse charge transport conductance switching neuromorphic computing |
| title | Bifunctional Memristive Behavior of a Dual‐Layer Structure Depending on the Configuration of Charge Transport |
| title_full | Bifunctional Memristive Behavior of a Dual‐Layer Structure Depending on the Configuration of Charge Transport |
| title_fullStr | Bifunctional Memristive Behavior of a Dual‐Layer Structure Depending on the Configuration of Charge Transport |
| title_full_unstemmed | Bifunctional Memristive Behavior of a Dual‐Layer Structure Depending on the Configuration of Charge Transport |
| title_short | Bifunctional Memristive Behavior of a Dual‐Layer Structure Depending on the Configuration of Charge Transport |
| title_sort | bifunctional memristive behavior of a dual layer structure depending on the configuration of charge transport |
| topic | artificial neuron artificial synapse charge transport conductance switching neuromorphic computing |
| url | https://doi.org/10.1002/aelm.202500029 |
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