Thin Film Al-Al2O3-Al Capacitors With Dielectric Layer Formed at 400℃
Saved in:
| Main Authors: | T. Berlicki, S. J. Osadnik |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
1980-01-01
|
| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/APEC.6.219 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
INFLUENCE OF DISTURBED LAYERS ON THE DIELECTRIC PROPERTIES OF FERROELECTRIC THIN FILM CAPACITORS
by: P. P. Lavrov
Published: (2016-06-01) -
Thermoresistive Thin Film Flow Sensor
by: T. M. Berlicki, et al.
Published: (1989-01-01) -
Humidity Effect on Chip Capacitors With Al2O3 Multistage Anodised Films
by: G. Beensh-Marchwicka, et al.
Published: (1992-01-01) -
The planar anodic Al2O3-ZrO2 nanocomposite capacitor dielectrics for advanced passive device integration
by: Kirill Kamnev, et al.
Published: (2023-12-01) -
Effects of Graphene on the Mechanical and Dielectric Properties of Al2O3/ Polyimide Films
by: LI Shengli, et al.
Published: (2020-02-01)