Investigation of Photo-Electrial Properties in (Fe2O3-G)/n-Si Device
This study focuses on the synthesis of iron oxide-graphene (-Fe2O3-G) composite materials and the evaluation of their performance in devices constructed on n-type silicon (n-Si) semiconductors, under both dark and illuminated conditions. Key electrical parameters such as the ideality factor (n = 2....
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| Format: | Article |
| Language: | English |
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Atatürk University
2024-12-01
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| Series: | Journal of Anatolian Physics and Astronomy |
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| Online Access: | https://dergipark.org.tr/tr/download/article-file/4124821 |
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| author | Elif Daş Gamze Bozkurt |
| author_facet | Elif Daş Gamze Bozkurt |
| author_sort | Elif Daş |
| collection | DOAJ |
| description | This study focuses on the synthesis of iron oxide-graphene (-Fe2O3-G) composite materials and the evaluation of their performance in devices constructed on n-type silicon (n-Si) semiconductors, under both dark and illuminated conditions. Key electrical parameters such as the ideality factor (n = 2.59), barrier height (Φb = 0.74 eV), and series resistance (Rs = 70 kΩ) were determined using Thermionic Emission (TE) and Norde methods from I-V measurements taken in the dark. The device's photoelectrical properties were further examined under illumination, revealing that the Fe2O3-G/n-Si device exhibits self-powered behavior, operating without an external power source. The device achieved a maximum ON/OFF ratio of 32496 and a spesific detectivity (D*) of 26.6 Jones at 0V, along with a maximum responsivity (R) of 98 mAW-1 at -2V. These results highlight the device's potential for efficient photodetection, particularly in self-powered applications. |
| format | Article |
| id | doaj-art-dd51db93d19b4e89ad1914e505fe0bf0 |
| institution | OA Journals |
| issn | 2791-8718 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Atatürk University |
| record_format | Article |
| series | Journal of Anatolian Physics and Astronomy |
| spelling | doaj-art-dd51db93d19b4e89ad1914e505fe0bf02025-08-20T02:13:15ZengAtatürk UniversityJournal of Anatolian Physics and Astronomy2791-87182024-12-0132627410.5281/zenodo.1434418255Investigation of Photo-Electrial Properties in (Fe2O3-G)/n-Si DeviceElif Daş0https://orcid.org/0000-0002-3149-6016Gamze Bozkurt1ATATÜRK ÜNİVERSİTESİERZURUM TEKNİK ÜNİVERSİTESİThis study focuses on the synthesis of iron oxide-graphene (-Fe2O3-G) composite materials and the evaluation of their performance in devices constructed on n-type silicon (n-Si) semiconductors, under both dark and illuminated conditions. Key electrical parameters such as the ideality factor (n = 2.59), barrier height (Φb = 0.74 eV), and series resistance (Rs = 70 kΩ) were determined using Thermionic Emission (TE) and Norde methods from I-V measurements taken in the dark. The device's photoelectrical properties were further examined under illumination, revealing that the Fe2O3-G/n-Si device exhibits self-powered behavior, operating without an external power source. The device achieved a maximum ON/OFF ratio of 32496 and a spesific detectivity (D*) of 26.6 Jones at 0V, along with a maximum responsivity (R) of 98 mAW-1 at -2V. These results highlight the device's potential for efficient photodetection, particularly in self-powered applications.https://dergipark.org.tr/tr/download/article-file/4124821i-v characteristicnorde methodphotosensitive devicemicro-emulsion methodi-v karakteristiğinorde metoduişığa duyarlı cihazmikro-emülsiyon yöntemi |
| spellingShingle | Elif Daş Gamze Bozkurt Investigation of Photo-Electrial Properties in (Fe2O3-G)/n-Si Device Journal of Anatolian Physics and Astronomy i-v characteristic norde method photosensitive device micro-emulsion method i-v karakteristiği norde metodu işığa duyarlı cihaz mikro-emülsiyon yöntemi |
| title | Investigation of Photo-Electrial Properties in (Fe2O3-G)/n-Si Device |
| title_full | Investigation of Photo-Electrial Properties in (Fe2O3-G)/n-Si Device |
| title_fullStr | Investigation of Photo-Electrial Properties in (Fe2O3-G)/n-Si Device |
| title_full_unstemmed | Investigation of Photo-Electrial Properties in (Fe2O3-G)/n-Si Device |
| title_short | Investigation of Photo-Electrial Properties in (Fe2O3-G)/n-Si Device |
| title_sort | investigation of photo electrial properties in fe2o3 g n si device |
| topic | i-v characteristic norde method photosensitive device micro-emulsion method i-v karakteristiği norde metodu işığa duyarlı cihaz mikro-emülsiyon yöntemi |
| url | https://dergipark.org.tr/tr/download/article-file/4124821 |
| work_keys_str_mv | AT elifdas investigationofphotoelectrialpropertiesinfe2o3gnsidevice AT gamzebozkurt investigationofphotoelectrialpropertiesinfe2o3gnsidevice |