Investigation of Photo-Electrial Properties in (Fe2O3-G)/n-Si Device
This study focuses on the synthesis of iron oxide-graphene (-Fe2O3-G) composite materials and the evaluation of their performance in devices constructed on n-type silicon (n-Si) semiconductors, under both dark and illuminated conditions. Key electrical parameters such as the ideality factor (n = 2....
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Atatürk University
2024-12-01
|
| Series: | Journal of Anatolian Physics and Astronomy |
| Subjects: | |
| Online Access: | https://dergipark.org.tr/tr/download/article-file/4124821 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | This study focuses on the synthesis of iron oxide-graphene (-Fe2O3-G) composite materials and the evaluation of their performance in devices constructed on n-type silicon (n-Si) semiconductors, under both dark and illuminated conditions. Key electrical parameters such as the ideality factor (n = 2.59), barrier height (Φb = 0.74 eV), and series resistance (Rs = 70 kΩ) were determined using Thermionic Emission (TE) and Norde methods from I-V measurements taken in the dark. The device's photoelectrical properties were further examined under illumination, revealing that the Fe2O3-G/n-Si device exhibits self-powered behavior, operating without an external power source. The device achieved a maximum ON/OFF ratio of 32496 and a spesific detectivity (D*) of 26.6 Jones at 0V, along with a maximum responsivity (R) of 98 mAW-1 at -2V. These results highlight the device's potential for efficient photodetection, particularly in self-powered applications. |
|---|---|
| ISSN: | 2791-8718 |