Interfacial Chemical and Electrical Performance Study and Thermal Annealing Refinement for AlTiO/4H-SiC MOS Capacitors

Interfacial Chemical and Electrical Performance Study and Thermal Annealing Refinement for AlTiO/4H-SiC MOS Capacitors

The gate reliability issues in SiC-based devices with a gate dielectric formed through heat oxidation are important factors limiting their application in power devices. Aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) and titanium dioxide (TiO<sub>2</sub>) were combin...

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Bibliographic Details
Main Authors: Yu-Xuan Zeng, Wei Huang, Hong-Ping Ma, Qing-Chun Zhang
Format: Article
Language:English
Published: MDPI AG 2025-05-01
Series:Nanomaterials
Subjects:
high-k material
AlTiO
4H-SiC
gate dielectric
interface state
Online Access:https://www.mdpi.com/2079-4991/15/11/814
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