NUMERICAL SIMULATION OF ELECTRIC CHARACTERISTICS OF DEEP SUBMICRON SILICON-ON-INSULATOR MOS TRANSISTOR
Today submicron silicon-on-insulator (SOI) MOSFET structures are widely used in different electronic components and also can be used as sensing elements in some applications. The development of devices based on the structures with specified characteristics is impossible without computer simulation o...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Belarusian National Technical University
2016-09-01
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| Series: | Приборы и методы измерений |
| Subjects: | |
| Online Access: | https://pimi.bntu.by/jour/article/view/253 |
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