CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications
Abstract HfOx‐based resistive random‐access‐memory (ReRAM) devices (TiN/Ti/HfOx/RuOx/TiN) are fabricated by CMOS‐compatible materials (ruthenium (Ru)) and lithography‐lite process, potentially enabling a maskless, etching‐free process that can be implemented in the low earth orbit (LEO), the Interna...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-06-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400823 |
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| author | Yao‐Feng Chang Yifu Huang Chin‐Han Chung Ying‐Chen Chen |
| author_facet | Yao‐Feng Chang Yifu Huang Chin‐Han Chung Ying‐Chen Chen |
| author_sort | Yao‐Feng Chang |
| collection | DOAJ |
| description | Abstract HfOx‐based resistive random‐access‐memory (ReRAM) devices (TiN/Ti/HfOx/RuOx/TiN) are fabricated by CMOS‐compatible materials (ruthenium (Ru)) and lithography‐lite process, potentially enabling a maskless, etching‐free process that can be implemented in the low earth orbit (LEO), the International Space Station (ISS), and commercial LEO destinations (CLDs). The devices met the requirements for qualified manufacturers list verification (QMLV) and radiation hardness assurance (QMLV‐RHA), as well as Advanced Next Generation Strategic Radiation, hardened Memory (ANGSTRM), which potentially support LEO, medium earth orbit, and geosynchronous orbit missions. Specifically, after a 5‐Mrad total ionizing dose (TID) test, the electrical characterized results showed non‐degradation performance, memory window ≈40 with operation power < mW, capability of > 000‐times endurance and 15‐year retention. The Ruthenium oxide (RuOx) can serve as a photon‐absorb sink to reduce the switching layer damage caused by heating induced by radiation, supported by Particle and Heavy Ion Transport Code System Monte Carlo simulation. Furthermore, the neural network by HfOx/RuOx‐based ReRAM device is trained with the inference accuracy at various TIDs for a potential neuromorphic hardware system demonstration. The results show that HfOx/RuOx‐based ReRAM neuromorphic computing is quite robust as a radiation‐hardened structure, providing a development path to realize programmable computing chip tolerance under irradiation. |
| format | Article |
| id | doaj-art-dc49c413e3cf4bba94e0a00238b0bc72 |
| institution | OA Journals |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-06-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-dc49c413e3cf4bba94e0a00238b0bc722025-08-20T02:07:24ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-06-01119n/an/a10.1002/aelm.202400823CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing ApplicationsYao‐Feng Chang0Yifu Huang1Chin‐Han Chung2Ying‐Chen Chen3Intel Corporation 2501 NE Century Blvd Hillsboro Oregon 97124‐5503 USADepartment of Electrical and Computer Engineering University of Texas at Austin 10100 Burnet Road Austin TX 78758 USAInternational College of Semiconductor Technology National Yang Ming Chiao Tung University (NYCU) Hsinchu 30010 TaiwanSchool of Electrical Computer and Energy Engineering Arizona State University Tempe AZ 85287 USAAbstract HfOx‐based resistive random‐access‐memory (ReRAM) devices (TiN/Ti/HfOx/RuOx/TiN) are fabricated by CMOS‐compatible materials (ruthenium (Ru)) and lithography‐lite process, potentially enabling a maskless, etching‐free process that can be implemented in the low earth orbit (LEO), the International Space Station (ISS), and commercial LEO destinations (CLDs). The devices met the requirements for qualified manufacturers list verification (QMLV) and radiation hardness assurance (QMLV‐RHA), as well as Advanced Next Generation Strategic Radiation, hardened Memory (ANGSTRM), which potentially support LEO, medium earth orbit, and geosynchronous orbit missions. Specifically, after a 5‐Mrad total ionizing dose (TID) test, the electrical characterized results showed non‐degradation performance, memory window ≈40 with operation power < mW, capability of > 000‐times endurance and 15‐year retention. The Ruthenium oxide (RuOx) can serve as a photon‐absorb sink to reduce the switching layer damage caused by heating induced by radiation, supported by Particle and Heavy Ion Transport Code System Monte Carlo simulation. Furthermore, the neural network by HfOx/RuOx‐based ReRAM device is trained with the inference accuracy at various TIDs for a potential neuromorphic hardware system demonstration. The results show that HfOx/RuOx‐based ReRAM neuromorphic computing is quite robust as a radiation‐hardened structure, providing a development path to realize programmable computing chip tolerance under irradiation.https://doi.org/10.1002/aelm.202400823BEOLemerging memorymemristorRRAM |
| spellingShingle | Yao‐Feng Chang Yifu Huang Chin‐Han Chung Ying‐Chen Chen CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications Advanced Electronic Materials BEOL emerging memory memristor RRAM |
| title | CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications |
| title_full | CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications |
| title_fullStr | CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications |
| title_full_unstemmed | CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications |
| title_short | CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications |
| title_sort | cmos compatible hfox based radiation hardening component for neuromorphic computing applications |
| topic | BEOL emerging memory memristor RRAM |
| url | https://doi.org/10.1002/aelm.202400823 |
| work_keys_str_mv | AT yaofengchang cmoscompatiblehfoxbasedradiationhardeningcomponentforneuromorphiccomputingapplications AT yifuhuang cmoscompatiblehfoxbasedradiationhardeningcomponentforneuromorphiccomputingapplications AT chinhanchung cmoscompatiblehfoxbasedradiationhardeningcomponentforneuromorphiccomputingapplications AT yingchenchen cmoscompatiblehfoxbasedradiationhardeningcomponentforneuromorphiccomputingapplications |