Radiation Resistance of Epitaxial Structures Based on GaAs
This paper presents the results of a study on the irradiation of heterostructures based on gallium arsenide with neutrons and gamma rays. The horizontal channel of the IRT-2000 reactor with an energy of 2.65 MeV served as a source of neutrons. Two types of structures were considered: autoepitaxial (...
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MIREA - Russian Technological University
2019-06-01
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| Series: | Российский технологический журнал |
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| Online Access: | https://www.rtj-mirea.ru/jour/article/view/154 |
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| author | E. N. Vigdorovich |
| author_facet | E. N. Vigdorovich |
| author_sort | E. N. Vigdorovich |
| collection | DOAJ |
| description | This paper presents the results of a study on the irradiation of heterostructures based on gallium arsenide with neutrons and gamma rays. The horizontal channel of the IRT-2000 reactor with an energy of 2.65 MeV served as a source of neutrons. Two types of structures were considered: autoepitaxial (AES) and heteroepitaxial (HES). They were obtained by the MOC-hydride method under reduced pressure using gallium and aluminum organometallic compounds and arsine. The obtained results show that irradiation with neutrons and gamma-quanta just slightly changes the concentration of the charge carriers of the autoepitaxial structures and the density of the charge carriers of the heteroepitaxial structures. As for the mobility of charge carriers, some increase in their mobility is observed at the initial moment of irradiation. As the irradiation flux density increases, the mobility either stabilizes at a certain level or decreases. The increase in mobility after the first irradiation of the heterostructures indicates an increase in the lifetime of charge carriers, apparently due to a decrease in the concentration of recombination centers in the structures, most likely, the density of structural defects at the heteroboundaries. When irradiating with fast neutrons, a similar picture is observed. Initially, the mobility of charge carriers slightly increases as the concentration of charge carriers slightly changes. Then the characteristics stabilize. An increase in the uniformity of properties over the area of the structures is observed. It is assumed that this is due to the appearance of clusters of defects and impurities. |
| format | Article |
| id | doaj-art-dc38dfd1c5204520b01bb4f73c539439 |
| institution | DOAJ |
| issn | 2782-3210 2500-316X |
| language | Russian |
| publishDate | 2019-06-01 |
| publisher | MIREA - Russian Technological University |
| record_format | Article |
| series | Российский технологический журнал |
| spelling | doaj-art-dc38dfd1c5204520b01bb4f73c5394392025-08-20T02:53:54ZrusMIREA - Russian Technological UniversityРоссийский технологический журнал2782-32102500-316X2019-06-0173414910.32362/2500-316X-2019-7-3-41-49153Radiation Resistance of Epitaxial Structures Based on GaAsE. N. Vigdorovich0MIREA – Russian Technological UniversityThis paper presents the results of a study on the irradiation of heterostructures based on gallium arsenide with neutrons and gamma rays. The horizontal channel of the IRT-2000 reactor with an energy of 2.65 MeV served as a source of neutrons. Two types of structures were considered: autoepitaxial (AES) and heteroepitaxial (HES). They were obtained by the MOC-hydride method under reduced pressure using gallium and aluminum organometallic compounds and arsine. The obtained results show that irradiation with neutrons and gamma-quanta just slightly changes the concentration of the charge carriers of the autoepitaxial structures and the density of the charge carriers of the heteroepitaxial structures. As for the mobility of charge carriers, some increase in their mobility is observed at the initial moment of irradiation. As the irradiation flux density increases, the mobility either stabilizes at a certain level or decreases. The increase in mobility after the first irradiation of the heterostructures indicates an increase in the lifetime of charge carriers, apparently due to a decrease in the concentration of recombination centers in the structures, most likely, the density of structural defects at the heteroboundaries. When irradiating with fast neutrons, a similar picture is observed. Initially, the mobility of charge carriers slightly increases as the concentration of charge carriers slightly changes. Then the characteristics stabilize. An increase in the uniformity of properties over the area of the structures is observed. It is assumed that this is due to the appearance of clusters of defects and impurities.https://www.rtj-mirea.ru/jour/article/view/154gallium arsenideirradiationautoepitaxial structuresheteroepitaxial structurescharge carrier concentration and mobility |
| spellingShingle | E. N. Vigdorovich Radiation Resistance of Epitaxial Structures Based on GaAs Российский технологический журнал gallium arsenide irradiation autoepitaxial structures heteroepitaxial structures charge carrier concentration and mobility |
| title | Radiation Resistance of Epitaxial Structures Based on GaAs |
| title_full | Radiation Resistance of Epitaxial Structures Based on GaAs |
| title_fullStr | Radiation Resistance of Epitaxial Structures Based on GaAs |
| title_full_unstemmed | Radiation Resistance of Epitaxial Structures Based on GaAs |
| title_short | Radiation Resistance of Epitaxial Structures Based on GaAs |
| title_sort | radiation resistance of epitaxial structures based on gaas |
| topic | gallium arsenide irradiation autoepitaxial structures heteroepitaxial structures charge carrier concentration and mobility |
| url | https://www.rtj-mirea.ru/jour/article/view/154 |
| work_keys_str_mv | AT envigdorovich radiationresistanceofepitaxialstructuresbasedongaas |