Effect of Change in Ba Concentration on Crystallintiy and Dielectric Constant of the Sol-Gel Deposited Barium Strontium Titante (BST) Films on n-Type Si Wafer

Effect of Change in Ba Concentration on Crystallintiy and Dielectric Constant of the Sol-Gel Deposited Barium Strontium Titante (BST) Films on n-Type Si Wafer

Thin (Bax, Sr1 – x)TiO3 (BST) films of different chemical compositions (x = 0.3 0.5 & 0.7) were prepared by the sol-gel process using barium acetate, strontium acetate and titanium isopropoxide as metal alkoxides. The titanium isopropoxide was dissolved in acetyl acetone (chelating agent) and mi...

Full description

Saved in:
Bibliographic Details
Main Authors: C.C. Tripathi, Chandan Sharma, S.C. Sood, Jyoti Gupta, Dhrambir Singh, Simranjeet Singh, Rohit Sharma
Format: Article
Language:English
Published: Sumy State University 2011-01-01
Series:Журнал нано- та електронної фізики
Subjects:
ВАХ
Sr(1 – x)TiO
Sol-gel process
Dielectric constant
XRD
CV-measurement.
Online Access:http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1(Part5)_0851-0858.pdf
Tags: Add Tag
No Tags, Be the first to tag this record!

Similar Items

Similar Items