THE INFLUENCE OF DEFECTS ON THE ELECTRONIC PROPERTIES OF STRUCTURES OF LAYERED DICHALCOGENIDES OF REFRACTORY METALS
Computer modeling of the electronic structure of heterostructures made of individual layers of two-dimensional crystals of MoS2, WS2, WSe2 and MoSe2 is performed by means of first-principles methods. Two variants of the mutual arrangement of the layers of two-dimensional crystals are suggested. Prop...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | Russian |
| Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
|
| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/820 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849340428609912832 |
|---|---|
| author | A. V. Krivosheeva V. L. Shaposhnikov A. Yu. Alexeev |
| author_facet | A. V. Krivosheeva V. L. Shaposhnikov A. Yu. Alexeev |
| author_sort | A. V. Krivosheeva |
| collection | DOAJ |
| description | Computer modeling of the electronic structure of heterostructures made of individual layers of two-dimensional crystals of MoS2, WS2, WSe2 and MoSe2 is performed by means of first-principles methods. Two variants of the mutual arrangement of the layers of two-dimensional crystals are suggested. Properties of such heterostructures in the presence of impurities and defects are investigated. |
| format | Article |
| id | doaj-art-dbe89c4d17b24563bd72eac437d52449 |
| institution | Kabale University |
| issn | 1729-7648 |
| language | Russian |
| publishDate | 2019-06-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj-art-dbe89c4d17b24563bd72eac437d524492025-08-20T03:43:55ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-01087681819THE INFLUENCE OF DEFECTS ON THE ELECTRONIC PROPERTIES OF STRUCTURES OF LAYERED DICHALCOGENIDES OF REFRACTORY METALSA. V. Krivosheeva0V. L. Shaposhnikov1A. Yu. Alexeev2Белорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиComputer modeling of the electronic structure of heterostructures made of individual layers of two-dimensional crystals of MoS2, WS2, WSe2 and MoSe2 is performed by means of first-principles methods. Two variants of the mutual arrangement of the layers of two-dimensional crystals are suggested. Properties of such heterostructures in the presence of impurities and defects are investigated.https://doklady.bsuir.by/jour/article/view/820two-dimensional crystalsdichalcogenides of refractory metalselectronic structuresubstitutional impurityvacancy |
| spellingShingle | A. V. Krivosheeva V. L. Shaposhnikov A. Yu. Alexeev THE INFLUENCE OF DEFECTS ON THE ELECTRONIC PROPERTIES OF STRUCTURES OF LAYERED DICHALCOGENIDES OF REFRACTORY METALS Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki two-dimensional crystals dichalcogenides of refractory metals electronic structure substitutional impurity vacancy |
| title | THE INFLUENCE OF DEFECTS ON THE ELECTRONIC PROPERTIES OF STRUCTURES OF LAYERED DICHALCOGENIDES OF REFRACTORY METALS |
| title_full | THE INFLUENCE OF DEFECTS ON THE ELECTRONIC PROPERTIES OF STRUCTURES OF LAYERED DICHALCOGENIDES OF REFRACTORY METALS |
| title_fullStr | THE INFLUENCE OF DEFECTS ON THE ELECTRONIC PROPERTIES OF STRUCTURES OF LAYERED DICHALCOGENIDES OF REFRACTORY METALS |
| title_full_unstemmed | THE INFLUENCE OF DEFECTS ON THE ELECTRONIC PROPERTIES OF STRUCTURES OF LAYERED DICHALCOGENIDES OF REFRACTORY METALS |
| title_short | THE INFLUENCE OF DEFECTS ON THE ELECTRONIC PROPERTIES OF STRUCTURES OF LAYERED DICHALCOGENIDES OF REFRACTORY METALS |
| title_sort | influence of defects on the electronic properties of structures of layered dichalcogenides of refractory metals |
| topic | two-dimensional crystals dichalcogenides of refractory metals electronic structure substitutional impurity vacancy |
| url | https://doklady.bsuir.by/jour/article/view/820 |
| work_keys_str_mv | AT avkrivosheeva theinfluenceofdefectsontheelectronicpropertiesofstructuresoflayereddichalcogenidesofrefractorymetals AT vlshaposhnikov theinfluenceofdefectsontheelectronicpropertiesofstructuresoflayereddichalcogenidesofrefractorymetals AT ayualexeev theinfluenceofdefectsontheelectronicpropertiesofstructuresoflayereddichalcogenidesofrefractorymetals AT avkrivosheeva influenceofdefectsontheelectronicpropertiesofstructuresoflayereddichalcogenidesofrefractorymetals AT vlshaposhnikov influenceofdefectsontheelectronicpropertiesofstructuresoflayereddichalcogenidesofrefractorymetals AT ayualexeev influenceofdefectsontheelectronicpropertiesofstructuresoflayereddichalcogenidesofrefractorymetals |