THE INFLUENCE OF DEFECTS ON THE ELECTRONIC PROPERTIES OF STRUCTURES OF LAYERED DICHALCOGENIDES OF REFRACTORY METALS
Computer modeling of the electronic structure of heterostructures made of individual layers of two-dimensional crystals of MoS2, WS2, WSe2 and MoSe2 is performed by means of first-principles methods. Two variants of the mutual arrangement of the layers of two-dimensional crystals are suggested. Prop...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/820 |
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| Summary: | Computer modeling of the electronic structure of heterostructures made of individual layers of two-dimensional crystals of MoS2, WS2, WSe2 and MoSe2 is performed by means of first-principles methods. Two variants of the mutual arrangement of the layers of two-dimensional crystals are suggested. Properties of such heterostructures in the presence of impurities and defects are investigated. |
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| ISSN: | 1729-7648 |