Dielectrically Modulated Single Schottky Barrier and Electrostatically Doped Drain Based FET for Biosensing Applications
In this work, we propose a novel Gate and Drain Engineered Schottky Barrier (SB) FET (GDE-SBFET) for biosensing application with significant sensitivity improvement. Two different gate materials are employed by the proposed SB device having work functions of 3.9 eV (Al) and 4.72 eV (Cu) and electros...
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2024-01-01
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| Online Access: | https://ieeexplore.ieee.org/document/10676977/ |
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| author | Faisal Bashir Furqan Zahoor Haider Abbas Ali Alzahrani Mehwish Hanif |
| author_facet | Faisal Bashir Furqan Zahoor Haider Abbas Ali Alzahrani Mehwish Hanif |
| author_sort | Faisal Bashir |
| collection | DOAJ |
| description | In this work, we propose a novel Gate and Drain Engineered Schottky Barrier (SB) FET (GDE-SBFET) for biosensing application with significant sensitivity improvement. Two different gate materials are employed by the proposed SB device having work functions of 3.9 eV (Al) and 4.72 eV (Cu) and electrostatically doped drain (work function of 3.9 eV). Etching out the oxide on both sides of the gate creates a nano-gap cavity that is used to detect the biomolecule. The biomolecule electrical characteristics such as charge density and dielectric constant can modify the SB on either side of the gate, which can alter the device‘s driving current. The Drain Current sensitivity (<inline-formula> <tex-math notation="LaTeX">$S_{drain}$ </tex-math></inline-formula>) parameter are extensively analyzed at <inline-formula> <tex-math notation="LaTeX">$V_{DS} = V_{GS} = 0.5$ </tex-math></inline-formula>V and a comparison between state of the art devices and conventional devices has been carried out. From the obtained results, it can be concluded that proposed device sensitivity is much superior for negatively charged and neutral biomolecules (maximum of 460 for biomolecules with negative charge, maximum of 128 for neutral biomolecule and maximum of 35 for positively charged biomolecules, at K = 12). These are the highest values of sensitivity observed for SB-FETs. |
| format | Article |
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| issn | 2169-3536 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
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| spelling | doaj-art-dbac2cf994c34bea9d12272ddc6cb25f2025-08-20T01:54:57ZengIEEEIEEE Access2169-35362024-01-011213002213002710.1109/ACCESS.2024.345774810676977Dielectrically Modulated Single Schottky Barrier and Electrostatically Doped Drain Based FET for Biosensing ApplicationsFaisal Bashir0https://orcid.org/0000-0003-2473-2575Furqan Zahoor1https://orcid.org/0000-0002-0223-6434Haider Abbas2https://orcid.org/0000-0003-4372-2639Ali Alzahrani3https://orcid.org/0000-0001-9501-8331Mehwish Hanif4https://orcid.org/0000-0002-3303-929XDepartment of Computer Engineering, College of Computer Sciences and Information Technology, King Faisal University, Al-Ahsa, Saudi ArabiaDepartment of Computer Engineering, College of Computer Sciences and Information Technology, King Faisal University, Al-Ahsa, Saudi ArabiaDepartment of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, Republic of KoreaDepartment of Computer Engineering, College of Computer Sciences and Information Technology, King Faisal University, Al-Ahsa, Saudi ArabiaTyndall National Institute, University College Cork, Cork 21, IrelandIn this work, we propose a novel Gate and Drain Engineered Schottky Barrier (SB) FET (GDE-SBFET) for biosensing application with significant sensitivity improvement. Two different gate materials are employed by the proposed SB device having work functions of 3.9 eV (Al) and 4.72 eV (Cu) and electrostatically doped drain (work function of 3.9 eV). Etching out the oxide on both sides of the gate creates a nano-gap cavity that is used to detect the biomolecule. The biomolecule electrical characteristics such as charge density and dielectric constant can modify the SB on either side of the gate, which can alter the device‘s driving current. The Drain Current sensitivity (<inline-formula> <tex-math notation="LaTeX">$S_{drain}$ </tex-math></inline-formula>) parameter are extensively analyzed at <inline-formula> <tex-math notation="LaTeX">$V_{DS} = V_{GS} = 0.5$ </tex-math></inline-formula>V and a comparison between state of the art devices and conventional devices has been carried out. From the obtained results, it can be concluded that proposed device sensitivity is much superior for negatively charged and neutral biomolecules (maximum of 460 for biomolecules with negative charge, maximum of 128 for neutral biomolecule and maximum of 35 for positively charged biomolecules, at K = 12). These are the highest values of sensitivity observed for SB-FETs.https://ieeexplore.ieee.org/document/10676977/Biosensingschottky barriersensitivitybiosensingbiomoleculedielectric modulated |
| spellingShingle | Faisal Bashir Furqan Zahoor Haider Abbas Ali Alzahrani Mehwish Hanif Dielectrically Modulated Single Schottky Barrier and Electrostatically Doped Drain Based FET for Biosensing Applications IEEE Access Biosensing schottky barrier sensitivity biosensing biomolecule dielectric modulated |
| title | Dielectrically Modulated Single Schottky Barrier and Electrostatically Doped Drain Based FET for Biosensing Applications |
| title_full | Dielectrically Modulated Single Schottky Barrier and Electrostatically Doped Drain Based FET for Biosensing Applications |
| title_fullStr | Dielectrically Modulated Single Schottky Barrier and Electrostatically Doped Drain Based FET for Biosensing Applications |
| title_full_unstemmed | Dielectrically Modulated Single Schottky Barrier and Electrostatically Doped Drain Based FET for Biosensing Applications |
| title_short | Dielectrically Modulated Single Schottky Barrier and Electrostatically Doped Drain Based FET for Biosensing Applications |
| title_sort | dielectrically modulated single schottky barrier and electrostatically doped drain based fet for biosensing applications |
| topic | Biosensing schottky barrier sensitivity biosensing biomolecule dielectric modulated |
| url | https://ieeexplore.ieee.org/document/10676977/ |
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