Mineral Interface Doping: Hydroxyapatite Deposited on Silicon to Trigger the Electronic Properties
Abstract Doping silicon wafers without using highly toxic or corrosive chemical substances has become a critical issue for semiconductor device manufacturing. In this work, ultra‐thin films of hydroxyapatite (Ca5(PO4)3OH) are prepared by tethering by aggregation and growth (T‐BAG), and further proce...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2024-11-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202400061 |
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