Preparation and Characterization of (Au/n-SnO2/SiO2/Si/Al) MIS Device for Optoelectronic Application
SnO2 thin films were prepared by using rapid thermal oxidation (RTO) of Sn at oxidation temperature 873 K and oxidation time 90 sec on semiconductor n-type and p-type silicon substrate. In order to characterize the prepared device, the electrical properties have been measured which revealed that the...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2013-01-01
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| Series: | International Journal of Optics |
| Online Access: | http://dx.doi.org/10.1155/2013/756402 |
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