Preparation and Characterization of (Au/n-SnO2/SiO2/Si/Al) MIS Device for Optoelectronic Application
SnO2 thin films were prepared by using rapid thermal oxidation (RTO) of Sn at oxidation temperature 873 K and oxidation time 90 sec on semiconductor n-type and p-type silicon substrate. In order to characterize the prepared device, the electrical properties have been measured which revealed that the...
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| Format: | Article |
| Language: | English |
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Wiley
2013-01-01
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| Series: | International Journal of Optics |
| Online Access: | http://dx.doi.org/10.1155/2013/756402 |
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| author | Marwa Abdul Muhsien Evan T. Salem Ibrahim R. Agool |
| author_facet | Marwa Abdul Muhsien Evan T. Salem Ibrahim R. Agool |
| author_sort | Marwa Abdul Muhsien |
| collection | DOAJ |
| description | SnO2 thin films were prepared by using rapid thermal oxidation (RTO) of Sn at oxidation temperature 873 K and oxidation time 90 sec on semiconductor n-type and p-type silicon substrate. In order to characterize the prepared device, the electrical properties have been measured which revealed that the barrier height is greatly depended on interfacial layer thickness (SiO2). The value of peak response (n-SnO2/SiO2/n-Si) device was 0.16 A/W which is greater than that of (n-SnO2/SiO2/p-Si) device whose value was 0.12 A/W, while the rise time was found to be shorter. |
| format | Article |
| id | doaj-art-dae6e46e3df2456781bf1126727c2f7d |
| institution | Kabale University |
| issn | 1687-9384 1687-9392 |
| language | English |
| publishDate | 2013-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Optics |
| spelling | doaj-art-dae6e46e3df2456781bf1126727c2f7d2025-08-20T03:24:25ZengWileyInternational Journal of Optics1687-93841687-93922013-01-01201310.1155/2013/756402756402Preparation and Characterization of (Au/n-SnO2/SiO2/Si/Al) MIS Device for Optoelectronic ApplicationMarwa Abdul Muhsien0Evan T. Salem1Ibrahim R. Agool2Department of Physics, College of Science, Al Mustansiriyah University, Baghdad, IraqLaser and Optoelectronic Branch, School of Applied Sciences, University of Technology, Baghdad, IraqDepartment of Physics, College of Science, Al Mustansiriyah University, Baghdad, IraqSnO2 thin films were prepared by using rapid thermal oxidation (RTO) of Sn at oxidation temperature 873 K and oxidation time 90 sec on semiconductor n-type and p-type silicon substrate. In order to characterize the prepared device, the electrical properties have been measured which revealed that the barrier height is greatly depended on interfacial layer thickness (SiO2). The value of peak response (n-SnO2/SiO2/n-Si) device was 0.16 A/W which is greater than that of (n-SnO2/SiO2/p-Si) device whose value was 0.12 A/W, while the rise time was found to be shorter.http://dx.doi.org/10.1155/2013/756402 |
| spellingShingle | Marwa Abdul Muhsien Evan T. Salem Ibrahim R. Agool Preparation and Characterization of (Au/n-SnO2/SiO2/Si/Al) MIS Device for Optoelectronic Application International Journal of Optics |
| title | Preparation and Characterization of (Au/n-SnO2/SiO2/Si/Al) MIS Device for Optoelectronic Application |
| title_full | Preparation and Characterization of (Au/n-SnO2/SiO2/Si/Al) MIS Device for Optoelectronic Application |
| title_fullStr | Preparation and Characterization of (Au/n-SnO2/SiO2/Si/Al) MIS Device for Optoelectronic Application |
| title_full_unstemmed | Preparation and Characterization of (Au/n-SnO2/SiO2/Si/Al) MIS Device for Optoelectronic Application |
| title_short | Preparation and Characterization of (Au/n-SnO2/SiO2/Si/Al) MIS Device for Optoelectronic Application |
| title_sort | preparation and characterization of au n sno2 sio2 si al mis device for optoelectronic application |
| url | http://dx.doi.org/10.1155/2013/756402 |
| work_keys_str_mv | AT marwaabdulmuhsien preparationandcharacterizationofaunsno2sio2sialmisdeviceforoptoelectronicapplication AT evantsalem preparationandcharacterizationofaunsno2sio2sialmisdeviceforoptoelectronicapplication AT ibrahimragool preparationandcharacterizationofaunsno2sio2sialmisdeviceforoptoelectronicapplication |