Enhancing Ga─Sb Bonds by GaSb Co‐Doping Ge2Sb2Te5 for High Speed and Thermal Stability Phase Change Memory
Abstract Chalcogenide phase change memory, a next‐generation non‐volatile memory technology, holds significant promise in neuromorphic computing, leading to an urgent demand for high‐performance phase change materials. However, in the realm of phase change materials, there appears to be an inherent...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-08-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202500032 |
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