Enhancing Ga─Sb Bonds by GaSb Co‐Doping Ge2Sb2Te5 for High Speed and Thermal Stability Phase Change Memory
Abstract Chalcogenide phase change memory, a next‐generation non‐volatile memory technology, holds significant promise in neuromorphic computing, leading to an urgent demand for high‐performance phase change materials. However, in the realm of phase change materials, there appears to be an inherent...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-08-01
|
| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202500032 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849243700565114880 |
|---|---|
| author | Ke Gao Ruizhe Zhao Xin Li Jingwei Cai Hao Tong Xiangshui Miao |
| author_facet | Ke Gao Ruizhe Zhao Xin Li Jingwei Cai Hao Tong Xiangshui Miao |
| author_sort | Ke Gao |
| collection | DOAJ |
| description | Abstract Chalcogenide phase change memory, a next‐generation non‐volatile memory technology, holds significant promise in neuromorphic computing, leading to an urgent demand for high‐performance phase change materials. However, in the realm of phase change materials, there appears to be an inherent contradiction between enhancing crystallization speed and bolstering amorphous stability. In this work, the formation of Ga─Ge bonds associated with Ga single doping are effectively addressed through the deliberate incorporation of GaSb co‐doping. This strategic approach to bonding variety has significantly improved operational speed to a remarkable 8 ns, the crystallization temperature is elevated to 196 °C, and multilevel phase change performance is retained. First‐principles calculations and material characterization is conducted to elucidate the underlying mechanisms responsible for the observed enhancements in both thermal stability and operation speed. This investigation provides valuable insights for optimizing the performance of phase change materials and addresses the pressing challenge of integrating phase change materials into a neuromorphic computing system. |
| format | Article |
| id | doaj-art-d9d8909b41c34594bf13be7fd4823418 |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-08-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-d9d8909b41c34594bf13be7fd48234182025-08-20T03:59:22ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-08-011112n/an/a10.1002/aelm.202500032Enhancing Ga─Sb Bonds by GaSb Co‐Doping Ge2Sb2Te5 for High Speed and Thermal Stability Phase Change MemoryKe Gao0Ruizhe Zhao1Xin Li2Jingwei Cai3Hao Tong4Xiangshui Miao5School of Integrated Circuits Huazhong University of Science & Technology Wuhan 430074 ChinaSchool of Integrated Circuits Huazhong University of Science & Technology Wuhan 430074 ChinaSchool of Integrated Circuits Huazhong University of Science & Technology Wuhan 430074 ChinaSchool of Integrated Circuits Huazhong University of Science & Technology Wuhan 430074 ChinaSchool of Integrated Circuits Huazhong University of Science & Technology Wuhan 430074 ChinaSchool of Integrated Circuits Huazhong University of Science & Technology Wuhan 430074 ChinaAbstract Chalcogenide phase change memory, a next‐generation non‐volatile memory technology, holds significant promise in neuromorphic computing, leading to an urgent demand for high‐performance phase change materials. However, in the realm of phase change materials, there appears to be an inherent contradiction between enhancing crystallization speed and bolstering amorphous stability. In this work, the formation of Ga─Ge bonds associated with Ga single doping are effectively addressed through the deliberate incorporation of GaSb co‐doping. This strategic approach to bonding variety has significantly improved operational speed to a remarkable 8 ns, the crystallization temperature is elevated to 196 °C, and multilevel phase change performance is retained. First‐principles calculations and material characterization is conducted to elucidate the underlying mechanisms responsible for the observed enhancements in both thermal stability and operation speed. This investigation provides valuable insights for optimizing the performance of phase change materials and addresses the pressing challenge of integrating phase change materials into a neuromorphic computing system.https://doi.org/10.1002/aelm.202500032Ga─Sb bondhigh speedhigh thermal stabilitylinear and symmetric resistancephase change memory |
| spellingShingle | Ke Gao Ruizhe Zhao Xin Li Jingwei Cai Hao Tong Xiangshui Miao Enhancing Ga─Sb Bonds by GaSb Co‐Doping Ge2Sb2Te5 for High Speed and Thermal Stability Phase Change Memory Advanced Electronic Materials Ga─Sb bond high speed high thermal stability linear and symmetric resistance phase change memory |
| title | Enhancing Ga─Sb Bonds by GaSb Co‐Doping Ge2Sb2Te5 for High Speed and Thermal Stability Phase Change Memory |
| title_full | Enhancing Ga─Sb Bonds by GaSb Co‐Doping Ge2Sb2Te5 for High Speed and Thermal Stability Phase Change Memory |
| title_fullStr | Enhancing Ga─Sb Bonds by GaSb Co‐Doping Ge2Sb2Te5 for High Speed and Thermal Stability Phase Change Memory |
| title_full_unstemmed | Enhancing Ga─Sb Bonds by GaSb Co‐Doping Ge2Sb2Te5 for High Speed and Thermal Stability Phase Change Memory |
| title_short | Enhancing Ga─Sb Bonds by GaSb Co‐Doping Ge2Sb2Te5 for High Speed and Thermal Stability Phase Change Memory |
| title_sort | enhancing ga─sb bonds by gasb co doping ge2sb2te5 for high speed and thermal stability phase change memory |
| topic | Ga─Sb bond high speed high thermal stability linear and symmetric resistance phase change memory |
| url | https://doi.org/10.1002/aelm.202500032 |
| work_keys_str_mv | AT kegao enhancinggasbbondsbygasbcodopingge2sb2te5forhighspeedandthermalstabilityphasechangememory AT ruizhezhao enhancinggasbbondsbygasbcodopingge2sb2te5forhighspeedandthermalstabilityphasechangememory AT xinli enhancinggasbbondsbygasbcodopingge2sb2te5forhighspeedandthermalstabilityphasechangememory AT jingweicai enhancinggasbbondsbygasbcodopingge2sb2te5forhighspeedandthermalstabilityphasechangememory AT haotong enhancinggasbbondsbygasbcodopingge2sb2te5forhighspeedandthermalstabilityphasechangememory AT xiangshuimiao enhancinggasbbondsbygasbcodopingge2sb2te5forhighspeedandthermalstabilityphasechangememory |