Research on silicon carbide epitaxial equipment technology
Chemical vapor deposition equipment is used for homogeneous epitaxial growth on N-type 4H-SiC substrate. The film quality of epitaxial growth depends on the temperature field and air-flow field of epitaxial growth equipment. In this paper, the horizontal hot-wall technology route was taken as an exa...
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| Format: | Article |
| Language: | zho |
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Editorial Department of Electric Drive for Locomotives
2023-09-01
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| Series: | 机车电传动 |
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| Online Access: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2023.05.022 |
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| _version_ | 1849323347718963200 |
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| author | YUAN Fushun DENG Xiaojun LI Qingyan WANG Shi |
| author_facet | YUAN Fushun DENG Xiaojun LI Qingyan WANG Shi |
| author_sort | YUAN Fushun |
| collection | DOAJ |
| description | Chemical vapor deposition equipment is used for homogeneous epitaxial growth on N-type 4H-SiC substrate. The film quality of epitaxial growth depends on the temperature field and air-flow field of epitaxial growth equipment. In this paper, the horizontal hot-wall technology route was taken as an example. Through the study of the temperature field and the airflow field of the reaction chamber, the optimal reaction chamber structure was obtained, and through the study of the epitaxial process, the excellent process results were obtained. The epitaxial growth rate was more than 60 μm/h, the uniformity of different epitaxial film thicknesses was less than 1.2%, the uniformity of different doping concentrations was less than 3%, the defect density was less than 0.2 ea/cm<sup>2</sup>, and the root-mean-square roughness of the epitaxial layer surface was less than 0.15 nm. Meanwhile, stable results of 30 consecutive epitaxial process controls were achieved. |
| format | Article |
| id | doaj-art-d9b9e740f4fd45979b02bfc240d59580 |
| institution | Kabale University |
| issn | 1000-128X |
| language | zho |
| publishDate | 2023-09-01 |
| publisher | Editorial Department of Electric Drive for Locomotives |
| record_format | Article |
| series | 机车电传动 |
| spelling | doaj-art-d9b9e740f4fd45979b02bfc240d595802025-08-20T03:49:03ZzhoEditorial Department of Electric Drive for Locomotives机车电传动1000-128X2023-09-0119119742839472Research on silicon carbide epitaxial equipment technologyYUAN FushunDENG XiaojunLI QingyanWANG ShiChemical vapor deposition equipment is used for homogeneous epitaxial growth on N-type 4H-SiC substrate. The film quality of epitaxial growth depends on the temperature field and air-flow field of epitaxial growth equipment. In this paper, the horizontal hot-wall technology route was taken as an example. Through the study of the temperature field and the airflow field of the reaction chamber, the optimal reaction chamber structure was obtained, and through the study of the epitaxial process, the excellent process results were obtained. The epitaxial growth rate was more than 60 μm/h, the uniformity of different epitaxial film thicknesses was less than 1.2%, the uniformity of different doping concentrations was less than 3%, the defect density was less than 0.2 ea/cm<sup>2</sup>, and the root-mean-square roughness of the epitaxial layer surface was less than 0.15 nm. Meanwhile, stable results of 30 consecutive epitaxial process controls were achieved.http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2023.05.022silicon carbideepitaxial equipmenttemperature fieldair-flow field |
| spellingShingle | YUAN Fushun DENG Xiaojun LI Qingyan WANG Shi Research on silicon carbide epitaxial equipment technology 机车电传动 silicon carbide epitaxial equipment temperature field air-flow field |
| title | Research on silicon carbide epitaxial equipment technology |
| title_full | Research on silicon carbide epitaxial equipment technology |
| title_fullStr | Research on silicon carbide epitaxial equipment technology |
| title_full_unstemmed | Research on silicon carbide epitaxial equipment technology |
| title_short | Research on silicon carbide epitaxial equipment technology |
| title_sort | research on silicon carbide epitaxial equipment technology |
| topic | silicon carbide epitaxial equipment temperature field air-flow field |
| url | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2023.05.022 |
| work_keys_str_mv | AT yuanfushun researchonsiliconcarbideepitaxialequipmenttechnology AT dengxiaojun researchonsiliconcarbideepitaxialequipmenttechnology AT liqingyan researchonsiliconcarbideepitaxialequipmenttechnology AT wangshi researchonsiliconcarbideepitaxialequipmenttechnology |