Analysis of the crystalline quality of bulk In0.83Ga(Al)0.17 layers formed on metamorphic InAlAs/InP buffer layers with linear and nonlinearcomposition gradients

This paper investigates the effectiveness of metamorphic InAlAs buffer layers with linear and root-like dependence of the In mole fraction in the composition for the growth of bulk In0.83Ga(Al)0.17As layers on InP substrates. The analysis of the X-ray diffraction reciprocal space maps showed that in...

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Bibliographic Details
Main Authors:	Elena I. Vasilkova, Evgeny V. Pirogov, Vladimir N. Nevedomskiy, Oleg V. Barantsev, Kirill O. Voropaev, Аndrey А. Vasil’ev, Leonid Ya. Karachinsky, Innokenty I. Novikov, Maxim S. Sobolev
Format:	Article
Language:	English
Published:	Voronezh State University 2025-03-01
Series:	Конденсированные среды и межфазные границы
Subjects:	metamorphic buffer layers reciprocal space mapping of x-ray diffraction intensity transmission electron microscopy molecular beam epitaxy
Online Access:	https://journals.vsu.ru/kcmf/article/view/12624/12810
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Analysis of the crystalline quality of bulk In0.83Ga(Al)0.17 layers formed on metamorphic InAlAs/InP buffer layers with linear and nonlinearcomposition gradients

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