Analysis of the crystalline quality of bulk In0.83Ga(Al)0.17 layers formed on metamorphic InAlAs/InP buffer layers with linear and nonlinearcomposition gradients
This paper investigates the effectiveness of metamorphic InAlAs buffer layers with linear and root-like dependence of the In mole fraction in the composition for the growth of bulk In0.83Ga(Al)0.17As layers on InP substrates. The analysis of the X-ray diffraction reciprocal space maps showed that in...
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Voronezh State University
2025-03-01
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| Series: | Конденсированные среды и межфазные границы |
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| Online Access: | https://journals.vsu.ru/kcmf/article/view/12624/12810 |
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| author | Elena I. Vasilkova Evgeny V. Pirogov Vladimir N. Nevedomskiy Oleg V. Barantsev Kirill O. Voropaev Аndrey А. Vasil’ev Leonid Ya. Karachinsky Innokenty I. Novikov Maxim S. Sobolev |
| author_facet | Elena I. Vasilkova Evgeny V. Pirogov Vladimir N. Nevedomskiy Oleg V. Barantsev Kirill O. Voropaev Аndrey А. Vasil’ev Leonid Ya. Karachinsky Innokenty I. Novikov Maxim S. Sobolev |
| author_sort | Elena I. Vasilkova |
| collection | DOAJ |
| description | This paper investigates the effectiveness of metamorphic InAlAs buffer layers with linear and root-like dependence of the In mole fraction in the composition for the growth of bulk In0.83Ga(Al)0.17As layers on InP substrates. The analysis of the X-ray diffraction reciprocal space maps showed that in both cases In0.83Ga(Al)0.17As layers were partially strain-free. One of the mechanisms of strain relaxation during the growth of the linearly graded buffer layer is the rotation of the crystal lattice, while the mechanism of strain relaxation during the growth of the convex-graded buffer layer is a 0.82° tilt of the crystal lattice without any rotation. According to the images obtained by transmission electron microscopy, the density of threading dislocations in the upper InGaAs layers grown on the buffer layer with a linear composition gradient is ~ 5·108 cm–2 |
| format | Article |
| id | doaj-art-d9171cfba82a4a1da86e241b7959af8a |
| institution | OA Journals |
| issn | 1606-867X |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Voronezh State University |
| record_format | Article |
| series | Конденсированные среды и межфазные границы |
| spelling | doaj-art-d9171cfba82a4a1da86e241b7959af8a2025-08-20T01:48:25ZengVoronezh State UniversityКонденсированные среды и межфазные границы1606-867X2025-03-0127310.17308/kcmf.2025.27/12624Analysis of the crystalline quality of bulk In0.83Ga(Al)0.17 layers formed on metamorphic InAlAs/InP buffer layers with linear and nonlinearcomposition gradientsElena I. Vasilkova0https://orcid.org/0000-0002-0349-7134Evgeny V. Pirogov1https://orcid.org/0000-0001-7186-3768Vladimir N. Nevedomskiy2https://orcid.org/0000-0002-7661-9155Oleg V. Barantsev3https://orcid.org/0009-0001-6873-8488Kirill O. Voropaev4https://orcid.org/0000-0002-6159-8902Аndrey А. Vasil’ev5https://orcid.org/0009-0009-2615-6795Leonid Ya. Karachinsky6https://orcid.org/0000-0002-5634-8183Innokenty I. Novikov7https://orcid.org/0000-0003-1983-0242Maxim S. Sobolev8https://orcid.org/0000-0001-8629-2064Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation; St. Petersburg Electrotechnical University “LETI”, 5 Professora Popova ul., Saint Petersburg 197022, Russian FederationAlferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian FederationIoffe Institute, 26 Politekhnicheskaya st., Saint Petersburg 194021, Russian FederationAlferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian FederationJSC “OKB-Planeta”, 13a, room 1n Bolshaya Moskovskaya st., Velikiy Novgorod 173004, Russian FederationJSC “OKB-Planeta”, 13a, room 1n Bolshaya Moskovskaya st., Velikiy Novgorod 173004, Russian FederationAlferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation; LLC “Connector Optics”, 16 litera B Domostroitelnaya ul., Saint Petersburg 194292, Russian FederationAlferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation; LLC “Connector Optics”, 16 litera B Domostroitelnaya ul., Saint Petersburg 194292, Russian FederationAlferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation; St. Petersburg Electrotechnical University “LETI”, 5 Professora Popova ul., Saint Petersburg 197022, Russian Federation; LLC “Connector Optics”, 16 litera B Domostroitelnaya ul., Saint Petersburg 194292, Russian FederationThis paper investigates the effectiveness of metamorphic InAlAs buffer layers with linear and root-like dependence of the In mole fraction in the composition for the growth of bulk In0.83Ga(Al)0.17As layers on InP substrates. The analysis of the X-ray diffraction reciprocal space maps showed that in both cases In0.83Ga(Al)0.17As layers were partially strain-free. One of the mechanisms of strain relaxation during the growth of the linearly graded buffer layer is the rotation of the crystal lattice, while the mechanism of strain relaxation during the growth of the convex-graded buffer layer is a 0.82° tilt of the crystal lattice without any rotation. According to the images obtained by transmission electron microscopy, the density of threading dislocations in the upper InGaAs layers grown on the buffer layer with a linear composition gradient is ~ 5·108 cm–2https://journals.vsu.ru/kcmf/article/view/12624/12810metamorphic buffer layersreciprocal space mapping of x-ray diffraction intensitytransmission electron microscopymolecular beam epitaxy |
| spellingShingle | Elena I. Vasilkova Evgeny V. Pirogov Vladimir N. Nevedomskiy Oleg V. Barantsev Kirill O. Voropaev Аndrey А. Vasil’ev Leonid Ya. Karachinsky Innokenty I. Novikov Maxim S. Sobolev Analysis of the crystalline quality of bulk In0.83Ga(Al)0.17 layers formed on metamorphic InAlAs/InP buffer layers with linear and nonlinearcomposition gradients Конденсированные среды и межфазные границы metamorphic buffer layers reciprocal space mapping of x-ray diffraction intensity transmission electron microscopy molecular beam epitaxy |
| title | Analysis of the crystalline quality of bulk In0.83Ga(Al)0.17 layers formed on metamorphic InAlAs/InP buffer layers with linear and nonlinearcomposition gradients |
| title_full | Analysis of the crystalline quality of bulk In0.83Ga(Al)0.17 layers formed on metamorphic InAlAs/InP buffer layers with linear and nonlinearcomposition gradients |
| title_fullStr | Analysis of the crystalline quality of bulk In0.83Ga(Al)0.17 layers formed on metamorphic InAlAs/InP buffer layers with linear and nonlinearcomposition gradients |
| title_full_unstemmed | Analysis of the crystalline quality of bulk In0.83Ga(Al)0.17 layers formed on metamorphic InAlAs/InP buffer layers with linear and nonlinearcomposition gradients |
| title_short | Analysis of the crystalline quality of bulk In0.83Ga(Al)0.17 layers formed on metamorphic InAlAs/InP buffer layers with linear and nonlinearcomposition gradients |
| title_sort | analysis of the crystalline quality of bulk in0 83ga al 0 17 layers formed on metamorphic inalas inp buffer layers with linear and nonlinearcomposition gradients |
| topic | metamorphic buffer layers reciprocal space mapping of x-ray diffraction intensity transmission electron microscopy molecular beam epitaxy |
| url | https://journals.vsu.ru/kcmf/article/view/12624/12810 |
| work_keys_str_mv | AT elenaivasilkova analysisofthecrystallinequalityofbulkin083gaal017layersformedonmetamorphicinalasinpbufferlayerswithlinearandnonlinearcompositiongradients AT evgenyvpirogov analysisofthecrystallinequalityofbulkin083gaal017layersformedonmetamorphicinalasinpbufferlayerswithlinearandnonlinearcompositiongradients AT vladimirnnevedomskiy analysisofthecrystallinequalityofbulkin083gaal017layersformedonmetamorphicinalasinpbufferlayerswithlinearandnonlinearcompositiongradients AT olegvbarantsev analysisofthecrystallinequalityofbulkin083gaal017layersformedonmetamorphicinalasinpbufferlayerswithlinearandnonlinearcompositiongradients AT kirillovoropaev analysisofthecrystallinequalityofbulkin083gaal017layersformedonmetamorphicinalasinpbufferlayerswithlinearandnonlinearcompositiongradients AT andreyavasilev analysisofthecrystallinequalityofbulkin083gaal017layersformedonmetamorphicinalasinpbufferlayerswithlinearandnonlinearcompositiongradients AT leonidyakarachinsky analysisofthecrystallinequalityofbulkin083gaal017layersformedonmetamorphicinalasinpbufferlayerswithlinearandnonlinearcompositiongradients AT innokentyinovikov analysisofthecrystallinequalityofbulkin083gaal017layersformedonmetamorphicinalasinpbufferlayerswithlinearandnonlinearcompositiongradients AT maximssobolev analysisofthecrystallinequalityofbulkin083gaal017layersformedonmetamorphicinalasinpbufferlayerswithlinearandnonlinearcompositiongradients |