Analysis of the crystalline quality of bulk In0.83Ga(Al)0.17 layers formed on metamorphic InAlAs/InP buffer layers with linear and nonlinearcomposition gradients
This paper investigates the effectiveness of metamorphic InAlAs buffer layers with linear and root-like dependence of the In mole fraction in the composition for the growth of bulk In0.83Ga(Al)0.17As layers on InP substrates. The analysis of the X-ray diffraction reciprocal space maps showed that in...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Voronezh State University
2025-03-01
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| Series: | Конденсированные среды и межфазные границы |
| Subjects: | |
| Online Access: | https://journals.vsu.ru/kcmf/article/view/12624/12810 |
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| Summary: | This paper investigates the effectiveness of metamorphic InAlAs buffer layers with linear and root-like dependence of the In mole fraction in the composition for the growth of bulk In0.83Ga(Al)0.17As layers on InP substrates. The analysis of the X-ray diffraction reciprocal space maps showed that in both cases In0.83Ga(Al)0.17As layers were partially strain-free. One of the mechanisms of strain relaxation during the growth of the linearly graded buffer layer is the rotation of the crystal lattice, while the mechanism of strain relaxation during the growth of the convex-graded buffer layer is a 0.82° tilt of the crystal lattice without any rotation. According to the images obtained by transmission electron microscopy, the density of threading dislocations in the upper InGaAs layers grown on the buffer layer with a linear composition gradient is ~ 5·108 cm–2 |
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| ISSN: | 1606-867X |