MOCVD-grown, ultra-thin barrier AlN/GaN/AlN HEMTs fabricated using commercial GaN foundry process for Ka-band operation
This work presents aluminum nitride (AlN)/gallium nitride (GaN)/AlN high electron mobility transistors (HEMTs) on 100 mm silicon carbide (SiC) fabricated using a commercial 150 nm RF GaN foundry process. High electrical performance uniformity across the wafer surface is demonstrated. The thin 3 nm A...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
|
| Series: | Applied Physics Express |
| Online Access: | https://doi.org/10.35848/1882-0786/ade6c0 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849430920081178624 |
|---|---|
| author | Reet Chaudhuri Kyle Bothe Antonio Lucero Austin Hickman Shankar Miller-Murthy Debdeep Jena Huili Grace Xing Ko-Tao Lee |
| author_facet | Reet Chaudhuri Kyle Bothe Antonio Lucero Austin Hickman Shankar Miller-Murthy Debdeep Jena Huili Grace Xing Ko-Tao Lee |
| author_sort | Reet Chaudhuri |
| collection | DOAJ |
| description | This work presents aluminum nitride (AlN)/gallium nitride (GaN)/AlN high electron mobility transistors (HEMTs) on 100 mm silicon carbide (SiC) fabricated using a commercial 150 nm RF GaN foundry process. High electrical performance uniformity across the wafer surface is demonstrated. The thin 3 nm AlN barrier, low ohmic contact resistances (0.09 Ω.mm), and high-density (1.26 × 10 ^13 cm ^−2 ) 2DEG channel results in high transconductances of ∼640 mS mm ^−1 (maximum of 736 mS mm ^−1 ) and on-currents ∼1.5 A mm ^−1 . A peak power output of 2.68 W mm ^−1 at power added efficiency (PAE) of 32% at Ka-band is measured. These results represent a significant step towards technology maturity for the AlN/GaN/AlN HEMTs by demonstrating their compatibility with current GaN foundry processes. |
| format | Article |
| id | doaj-art-d9129e41d2424d7c893dc60a06e068c4 |
| institution | Kabale University |
| issn | 1882-0786 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-d9129e41d2424d7c893dc60a06e068c42025-08-20T03:27:48ZengIOP PublishingApplied Physics Express1882-07862025-01-0118707650110.35848/1882-0786/ade6c0MOCVD-grown, ultra-thin barrier AlN/GaN/AlN HEMTs fabricated using commercial GaN foundry process for Ka-band operationReet Chaudhuri0https://orcid.org/0000-0002-6562-4506Kyle Bothe1Antonio Lucero2Austin Hickman3https://orcid.org/0000-0002-6762-1405Shankar Miller-Murthy4Debdeep Jena5https://orcid.org/0000-0002-4076-4625Huili Grace Xing6https://orcid.org/0000-0002-2709-3839Ko-Tao Lee7Soctera Inc., Ithaca NY 14853, United States of AmericaQORVO Inc., Richardson, TX 75082, United States of AmericaQORVO Inc., Richardson, TX 75082, United States of AmericaSoctera Inc., Ithaca NY 14853, United States of AmericaSoctera Inc., Ithaca NY 14853, United States of AmericaSoctera Inc., Ithaca NY 14853, United States of AmericaSoctera Inc., Ithaca NY 14853, United States of AmericaQORVO Inc., Richardson, TX 75082, United States of AmericaThis work presents aluminum nitride (AlN)/gallium nitride (GaN)/AlN high electron mobility transistors (HEMTs) on 100 mm silicon carbide (SiC) fabricated using a commercial 150 nm RF GaN foundry process. High electrical performance uniformity across the wafer surface is demonstrated. The thin 3 nm AlN barrier, low ohmic contact resistances (0.09 Ω.mm), and high-density (1.26 × 10 ^13 cm ^−2 ) 2DEG channel results in high transconductances of ∼640 mS mm ^−1 (maximum of 736 mS mm ^−1 ) and on-currents ∼1.5 A mm ^−1 . A peak power output of 2.68 W mm ^−1 at power added efficiency (PAE) of 32% at Ka-band is measured. These results represent a significant step towards technology maturity for the AlN/GaN/AlN HEMTs by demonstrating their compatibility with current GaN foundry processes.https://doi.org/10.35848/1882-0786/ade6c0 |
| spellingShingle | Reet Chaudhuri Kyle Bothe Antonio Lucero Austin Hickman Shankar Miller-Murthy Debdeep Jena Huili Grace Xing Ko-Tao Lee MOCVD-grown, ultra-thin barrier AlN/GaN/AlN HEMTs fabricated using commercial GaN foundry process for Ka-band operation Applied Physics Express |
| title | MOCVD-grown, ultra-thin barrier AlN/GaN/AlN HEMTs fabricated using commercial GaN foundry process for Ka-band operation |
| title_full | MOCVD-grown, ultra-thin barrier AlN/GaN/AlN HEMTs fabricated using commercial GaN foundry process for Ka-band operation |
| title_fullStr | MOCVD-grown, ultra-thin barrier AlN/GaN/AlN HEMTs fabricated using commercial GaN foundry process for Ka-band operation |
| title_full_unstemmed | MOCVD-grown, ultra-thin barrier AlN/GaN/AlN HEMTs fabricated using commercial GaN foundry process for Ka-band operation |
| title_short | MOCVD-grown, ultra-thin barrier AlN/GaN/AlN HEMTs fabricated using commercial GaN foundry process for Ka-band operation |
| title_sort | mocvd grown ultra thin barrier aln gan aln hemts fabricated using commercial gan foundry process for ka band operation |
| url | https://doi.org/10.35848/1882-0786/ade6c0 |
| work_keys_str_mv | AT reetchaudhuri mocvdgrownultrathinbarrieralnganalnhemtsfabricatedusingcommercialganfoundryprocessforkabandoperation AT kylebothe mocvdgrownultrathinbarrieralnganalnhemtsfabricatedusingcommercialganfoundryprocessforkabandoperation AT antoniolucero mocvdgrownultrathinbarrieralnganalnhemtsfabricatedusingcommercialganfoundryprocessforkabandoperation AT austinhickman mocvdgrownultrathinbarrieralnganalnhemtsfabricatedusingcommercialganfoundryprocessforkabandoperation AT shankarmillermurthy mocvdgrownultrathinbarrieralnganalnhemtsfabricatedusingcommercialganfoundryprocessforkabandoperation AT debdeepjena mocvdgrownultrathinbarrieralnganalnhemtsfabricatedusingcommercialganfoundryprocessforkabandoperation AT huiligracexing mocvdgrownultrathinbarrieralnganalnhemtsfabricatedusingcommercialganfoundryprocessforkabandoperation AT kotaolee mocvdgrownultrathinbarrieralnganalnhemtsfabricatedusingcommercialganfoundryprocessforkabandoperation |