MOCVD-grown, ultra-thin barrier AlN/GaN/AlN HEMTs fabricated using commercial GaN foundry process for Ka-band operation
This work presents aluminum nitride (AlN)/gallium nitride (GaN)/AlN high electron mobility transistors (HEMTs) on 100 mm silicon carbide (SiC) fabricated using a commercial 150 nm RF GaN foundry process. High electrical performance uniformity across the wafer surface is demonstrated. The thin 3 nm A...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Online Access: | https://doi.org/10.35848/1882-0786/ade6c0 |
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| Summary: | This work presents aluminum nitride (AlN)/gallium nitride (GaN)/AlN high electron mobility transistors (HEMTs) on 100 mm silicon carbide (SiC) fabricated using a commercial 150 nm RF GaN foundry process. High electrical performance uniformity across the wafer surface is demonstrated. The thin 3 nm AlN barrier, low ohmic contact resistances (0.09 Ω.mm), and high-density (1.26 × 10 ^13 cm ^−2 ) 2DEG channel results in high transconductances of ∼640 mS mm ^−1 (maximum of 736 mS mm ^−1 ) and on-currents ∼1.5 A mm ^−1 . A peak power output of 2.68 W mm ^−1 at power added efficiency (PAE) of 32% at Ka-band is measured. These results represent a significant step towards technology maturity for the AlN/GaN/AlN HEMTs by demonstrating their compatibility with current GaN foundry processes. |
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| ISSN: | 1882-0786 |