Super-saturated complementary carbon nanotube transistors with intrinsic gain singularities
Abstract Digital-driven scaling poses significant problems to analog circuits because scaling severely deteriorates transistor current saturation, significantly degrading the intrinsic gain. Special material properties of emerging low-dimensional semiconductors trigger the possibility of providing s...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2025-04-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-58399-w |
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| author | Guanhua Long Yuru Wang Tianshun Bai Wangchang Li Panpan Zhang Xiaosong Deng Xiang Cai Meiqi Xi Yanxia Lin Xiaohan Cheng Chenwei Fan Fan Xia Xiao Luo Zhishuai Zhang Xuelei Liang Zhiyong Zhang Nan Sun Lian-Mao Peng Youfan Hu |
| author_facet | Guanhua Long Yuru Wang Tianshun Bai Wangchang Li Panpan Zhang Xiaosong Deng Xiang Cai Meiqi Xi Yanxia Lin Xiaohan Cheng Chenwei Fan Fan Xia Xiao Luo Zhishuai Zhang Xuelei Liang Zhiyong Zhang Nan Sun Lian-Mao Peng Youfan Hu |
| author_sort | Guanhua Long |
| collection | DOAJ |
| description | Abstract Digital-driven scaling poses significant problems to analog circuits because scaling severely deteriorates transistor current saturation, significantly degrading the intrinsic gain. Special material properties of emerging low-dimensional semiconductors trigger the possibility of providing solutions. We report complementary carbon nanotube thin-film transistors with negative differential resistance-induced current super-saturation for high, exponentially variable intrinsic gain with immunity against degradation during scaling. Current super-saturation at the negative-to-positive differential resistance transition boundary provides intrinsic gain singularities. The large-window, gate-modulated negative differential resistance behavior derived from carbon nanotube’s characteristics enables its practical utilization in circuits. When approaching the singularity, we record that the intrinsic gain varies by orders of magnitude, ranging from 102 to 106 at different operation points. We further demonstrate high and exponentially variable gain in an operational amplifier, showing a tunable single-stage gain ranging from 35 to 60 decibels. |
| format | Article |
| id | doaj-art-d8d6ee1c434f4698938e14f97d678efd |
| institution | OA Journals |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-d8d6ee1c434f4698938e14f97d678efd2025-08-20T02:12:07ZengNature PortfolioNature Communications2041-17232025-04-0116111110.1038/s41467-025-58399-wSuper-saturated complementary carbon nanotube transistors with intrinsic gain singularitiesGuanhua Long0Yuru Wang1Tianshun Bai2Wangchang Li3Panpan Zhang4Xiaosong Deng5Xiang Cai6Meiqi Xi7Yanxia Lin8Xiaohan Cheng9Chenwei Fan10Fan Xia11Xiao Luo12Zhishuai Zhang13Xuelei Liang14Zhiyong Zhang15Nan Sun16Lian-Mao Peng17Youfan Hu18Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Research Center for Carbon-Based Electronics, Peking UniversityKey Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Research Center for Carbon-Based Electronics, Peking UniversityKey Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Research Center for Carbon-Based Electronics, Peking UniversityKey Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Research Center for Carbon-Based Electronics, Peking UniversityState Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and TelecommunicationsKey Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Research Center for Carbon-Based Electronics, Peking UniversityKey Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Research Center for Carbon-Based Electronics, Peking UniversityKey Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Research Center for Carbon-Based Electronics, Peking UniversityAcademy for Advanced Interdisciplinary Studies, Peking UniversityAcademy for Advanced Interdisciplinary Studies, Peking UniversityKey Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Research Center for Carbon-Based Electronics, Peking UniversityKey Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Research Center for Carbon-Based Electronics, Peking UniversityKey Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Research Center for Carbon-Based Electronics, Peking UniversityDepartment of Electronic Engineering, Tsinghua UniversityKey Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Research Center for Carbon-Based Electronics, Peking UniversityKey Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Research Center for Carbon-Based Electronics, Peking UniversityDepartment of Electronic Engineering, Tsinghua UniversityKey Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Research Center for Carbon-Based Electronics, Peking UniversityKey Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Research Center for Carbon-Based Electronics, Peking UniversityAbstract Digital-driven scaling poses significant problems to analog circuits because scaling severely deteriorates transistor current saturation, significantly degrading the intrinsic gain. Special material properties of emerging low-dimensional semiconductors trigger the possibility of providing solutions. We report complementary carbon nanotube thin-film transistors with negative differential resistance-induced current super-saturation for high, exponentially variable intrinsic gain with immunity against degradation during scaling. Current super-saturation at the negative-to-positive differential resistance transition boundary provides intrinsic gain singularities. The large-window, gate-modulated negative differential resistance behavior derived from carbon nanotube’s characteristics enables its practical utilization in circuits. When approaching the singularity, we record that the intrinsic gain varies by orders of magnitude, ranging from 102 to 106 at different operation points. We further demonstrate high and exponentially variable gain in an operational amplifier, showing a tunable single-stage gain ranging from 35 to 60 decibels.https://doi.org/10.1038/s41467-025-58399-w |
| spellingShingle | Guanhua Long Yuru Wang Tianshun Bai Wangchang Li Panpan Zhang Xiaosong Deng Xiang Cai Meiqi Xi Yanxia Lin Xiaohan Cheng Chenwei Fan Fan Xia Xiao Luo Zhishuai Zhang Xuelei Liang Zhiyong Zhang Nan Sun Lian-Mao Peng Youfan Hu Super-saturated complementary carbon nanotube transistors with intrinsic gain singularities Nature Communications |
| title | Super-saturated complementary carbon nanotube transistors with intrinsic gain singularities |
| title_full | Super-saturated complementary carbon nanotube transistors with intrinsic gain singularities |
| title_fullStr | Super-saturated complementary carbon nanotube transistors with intrinsic gain singularities |
| title_full_unstemmed | Super-saturated complementary carbon nanotube transistors with intrinsic gain singularities |
| title_short | Super-saturated complementary carbon nanotube transistors with intrinsic gain singularities |
| title_sort | super saturated complementary carbon nanotube transistors with intrinsic gain singularities |
| url | https://doi.org/10.1038/s41467-025-58399-w |
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