Enhancing Optoelectronic Performance Through Rare-Earth-Doped ZnO: Insights and Applications
Rare-earth (RE) doping has been found to be a potent method to improve the structural, optical, electronic, and magnetic properties of ZnO, positioning it as a versatile material for future optoelectronic devices. This review herein thoroughly discusses the latest developments in RE-doped ZnO based...
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MDPI AG
2025-05-01
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| author | Shagun Sood Pawan Kumar Isha Raina Mrinmoy Misra Sandeep Kaushal Jyoti Gaur Sanjeev Kumar Gurjinder Singh |
| author_facet | Shagun Sood Pawan Kumar Isha Raina Mrinmoy Misra Sandeep Kaushal Jyoti Gaur Sanjeev Kumar Gurjinder Singh |
| author_sort | Shagun Sood |
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| description | Rare-earth (RE) doping has been found to be a potent method to improve the structural, optical, electronic, and magnetic properties of ZnO, positioning it as a versatile material for future optoelectronic devices. This review herein thoroughly discusses the latest developments in RE-doped ZnO based on the role of the dopant type, concentration, synthesis method, and consequences of property modifications. The 4f electronic states of rare-earth elements create strong visible emissions, control charge carriers, and design defects. These structural changes lead to tunable bandgap energies and increased light absorption. Also, RE doping considerably enhances ZnO’s performance in electronic devices, like UV photodetectors, LEDs, TCOs, and gas sensors. Though, challenges like solubility constraints and lattice distortions at higher doping concentrations are still key challenges. Co-doping methodologies and new synthesis techniques to further optimize the incorporation of RE into ZnO matrices are also reviewed in this article. By showing a systematic comparison of different RE-doped ZnO systems, this paper sheds light on their future optoelectronic applications. The results are useful for the design of advanced ZnO-based materials with customized functionalities, which will lead to enhanced device efficiency and new photonic applications. |
| format | Article |
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| issn | 2304-6732 |
| language | English |
| publishDate | 2025-05-01 |
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| series | Photonics |
| spelling | doaj-art-d8be44c7ece640108eef809048b6e4292025-08-20T01:56:41ZengMDPI AGPhotonics2304-67322025-05-0112545410.3390/photonics12050454Enhancing Optoelectronic Performance Through Rare-Earth-Doped ZnO: Insights and ApplicationsShagun Sood0Pawan Kumar1Isha Raina2Mrinmoy Misra3Sandeep Kaushal4Jyoti Gaur5Sanjeev Kumar6Gurjinder Singh7Department of Physics, University Institute of Sciences, Chandigarh University, Mohali 140413, IndiaDepartment of Physics, University Institute of Sciences, Chandigarh University, Mohali 140413, IndiaDepartment of Physics, University Institute of Sciences, Chandigarh University, Mohali 140413, IndiaMechatronics Engineering Department, School of Engineering, Manipal University Jaipur, Jaipur 303007, IndiaRegional Institute of Education, National Council of Educational Research and Training (NCERT), Ajmer 305004, IndiaResearch and Innovation Cell, Rayat Bahra University, Mohali 140301, IndiaDepartment of Physics, University Institute of Sciences, Chandigarh University, Mohali 140413, IndiaDepartment of Electrical and Electronics and Communication Engineering, DIT University, Dehradun 248009, IndiaRare-earth (RE) doping has been found to be a potent method to improve the structural, optical, electronic, and magnetic properties of ZnO, positioning it as a versatile material for future optoelectronic devices. This review herein thoroughly discusses the latest developments in RE-doped ZnO based on the role of the dopant type, concentration, synthesis method, and consequences of property modifications. The 4f electronic states of rare-earth elements create strong visible emissions, control charge carriers, and design defects. These structural changes lead to tunable bandgap energies and increased light absorption. Also, RE doping considerably enhances ZnO’s performance in electronic devices, like UV photodetectors, LEDs, TCOs, and gas sensors. Though, challenges like solubility constraints and lattice distortions at higher doping concentrations are still key challenges. Co-doping methodologies and new synthesis techniques to further optimize the incorporation of RE into ZnO matrices are also reviewed in this article. By showing a systematic comparison of different RE-doped ZnO systems, this paper sheds light on their future optoelectronic applications. The results are useful for the design of advanced ZnO-based materials with customized functionalities, which will lead to enhanced device efficiency and new photonic applications.https://www.mdpi.com/2304-6732/12/5/454rare-earth dopingZnO nanoparticlesoptoelectronicsphotodetectorslight-emitting diodestransparent conductive oxides |
| spellingShingle | Shagun Sood Pawan Kumar Isha Raina Mrinmoy Misra Sandeep Kaushal Jyoti Gaur Sanjeev Kumar Gurjinder Singh Enhancing Optoelectronic Performance Through Rare-Earth-Doped ZnO: Insights and Applications Photonics rare-earth doping ZnO nanoparticles optoelectronics photodetectors light-emitting diodes transparent conductive oxides |
| title | Enhancing Optoelectronic Performance Through Rare-Earth-Doped ZnO: Insights and Applications |
| title_full | Enhancing Optoelectronic Performance Through Rare-Earth-Doped ZnO: Insights and Applications |
| title_fullStr | Enhancing Optoelectronic Performance Through Rare-Earth-Doped ZnO: Insights and Applications |
| title_full_unstemmed | Enhancing Optoelectronic Performance Through Rare-Earth-Doped ZnO: Insights and Applications |
| title_short | Enhancing Optoelectronic Performance Through Rare-Earth-Doped ZnO: Insights and Applications |
| title_sort | enhancing optoelectronic performance through rare earth doped zno insights and applications |
| topic | rare-earth doping ZnO nanoparticles optoelectronics photodetectors light-emitting diodes transparent conductive oxides |
| url | https://www.mdpi.com/2304-6732/12/5/454 |
| work_keys_str_mv | AT shagunsood enhancingoptoelectronicperformancethroughrareearthdopedznoinsightsandapplications AT pawankumar enhancingoptoelectronicperformancethroughrareearthdopedznoinsightsandapplications AT isharaina enhancingoptoelectronicperformancethroughrareearthdopedznoinsightsandapplications AT mrinmoymisra enhancingoptoelectronicperformancethroughrareearthdopedznoinsightsandapplications AT sandeepkaushal enhancingoptoelectronicperformancethroughrareearthdopedznoinsightsandapplications AT jyotigaur enhancingoptoelectronicperformancethroughrareearthdopedznoinsightsandapplications AT sanjeevkumar enhancingoptoelectronicperformancethroughrareearthdopedznoinsightsandapplications AT gurjindersingh enhancingoptoelectronicperformancethroughrareearthdopedznoinsightsandapplications |