A solvent-compatible filter-transfer method of semi-transparent carbon-nanotube electrodes stacked with silver nanowires
Low-density films of single-walled carbon nanotubes (SWNTs) can be used as a semi-transparent top electrode for all-solution-processed film devices; however, their semiconductor characteristics vary depending on the experimental factors in their dispersion into solvents, and the sublayers are damage...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2022-12-01
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| Series: | Science and Technology of Advanced Materials |
| Subjects: | |
| Online Access: | https://www.tandfonline.com/doi/10.1080/14686996.2022.2144092 |
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| Summary: | Low-density films of single-walled carbon nanotubes (SWNTs) can be used as a semi-transparent top electrode for all-solution-processed film devices; however, their semiconductor characteristics vary depending on the experimental factors in their dispersion into solvents, and the sublayers are damaged as a result of solvent incompatibility. In this study, we report a solvent-compatible filter-transfer method for SWNT films stacked with silver nanowires (AgNWs), and evaluate the semiconductor characteristics through the p/n heterojunction with a Si wafer (SWNT/Si). AgNWs and SWNTs were successively filtered through their aqueous dispersion solutions using a membrane filter. The stacked semi-transparent films (AgNW/SWNT films with controlled densities) were successfully transferred onto glass plates and Si wafers. The transmittance at 550 nm revealed a window between 60% and 80% with a narrow sheet resistance range between 11 and 23 Ω □−1. The power conversion efficiency (PCE) of SWNT/Si was improved to 11.2% in a junction area of 0.031 cm2 through the use of spin-coated Nafion resins; however, the accumulated resistance of SWNTs drastically reduced the PCE to 2% as the area increased to ≥0.5 cm2. AgNWs maintained the PCE within a range of 10.7% to 8.6% for an area ranging from 0.031 cm2 to 1.13 cm2. All of the photovoltaic parameters were dependent on the junction areas, suggesting that AgNWs function as an effective current-collector layer on the semiconductor layer of SWNTs without direct contact of AgNWs with the Si surface. In addition, we report a solvent-compatible experiment for transferring AgNW/SWNT films onto a solvent-sensitive perovskite material (CH3NH3PbI3). |
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| ISSN: | 1468-6996 1878-5514 |