Modeling of electrons transfer in silicon carbide semiconductor structures
The results of the simulation of electron transfer processes in the three-dimensional structure of 4H-SiC silicon carbide are presented using the Monte Carlo method. The dependence of the average drift velocity, average energy and electron mobility of electrons and the diffusion coefficient from the...
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
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| Online Access: | https://doklady.bsuir.by/jour/article/view/1079 |
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| _version_ | 1849773156842078208 |
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| author | V. V. Murav'ev V. N. Mishchenka |
| author_facet | V. V. Murav'ev V. N. Mishchenka |
| author_sort | V. V. Murav'ev |
| collection | DOAJ |
| description | The results of the simulation of electron transfer processes in the three-dimensional structure of 4H-SiC silicon carbide are presented using the Monte Carlo method. The dependence of the average drift velocity, average energy and electron mobility of electrons and the diffusion coefficient from the electric field are obtained. |
| format | Article |
| id | doaj-art-d857792bfe824bd590391588e2be8fa8 |
| institution | DOAJ |
| issn | 1729-7648 |
| language | Russian |
| publishDate | 2019-06-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj-art-d857792bfe824bd590391588e2be8fa82025-08-20T03:02:07ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-010253571078Modeling of electrons transfer in silicon carbide semiconductor structuresV. V. Murav'ev0V. N. Mishchenka1Belarusian state university of informatics and radioelectronicsBelarusian state university of informatics and radioelectronicsThe results of the simulation of electron transfer processes in the three-dimensional structure of 4H-SiC silicon carbide are presented using the Monte Carlo method. The dependence of the average drift velocity, average energy and electron mobility of electrons and the diffusion coefficient from the electric field are obtained.https://doklady.bsuir.by/jour/article/view/1079silicon carbideelectron transfer processesmonte carlo method |
| spellingShingle | V. V. Murav'ev V. N. Mishchenka Modeling of electrons transfer in silicon carbide semiconductor structures Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki silicon carbide electron transfer processes monte carlo method |
| title | Modeling of electrons transfer in silicon carbide semiconductor structures |
| title_full | Modeling of electrons transfer in silicon carbide semiconductor structures |
| title_fullStr | Modeling of electrons transfer in silicon carbide semiconductor structures |
| title_full_unstemmed | Modeling of electrons transfer in silicon carbide semiconductor structures |
| title_short | Modeling of electrons transfer in silicon carbide semiconductor structures |
| title_sort | modeling of electrons transfer in silicon carbide semiconductor structures |
| topic | silicon carbide electron transfer processes monte carlo method |
| url | https://doklady.bsuir.by/jour/article/view/1079 |
| work_keys_str_mv | AT vvmuravev modelingofelectronstransferinsiliconcarbidesemiconductorstructures AT vnmishchenka modelingofelectronstransferinsiliconcarbidesemiconductorstructures |