A Valuable and Low-Budget Process Scheme of Equivalized 1 nm Technology Node Based on 2D Materials
Highlights A set of MoS2 nanosheet field-effect transistors (NSFETs) are fabricated, with two stacking nanosheet channel, in which two parallel MoS2 channels are controlled by three gate electrodes simultaneously. By building a comprehensive framework, the feasibility of replacing silicon-based comp...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2025-03-01
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| Series: | Nano-Micro Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1007/s40820-025-01702-7 |
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