A Valuable and Low-Budget Process Scheme of Equivalized 1 nm Technology Node Based on 2D Materials
Highlights A set of MoS2 nanosheet field-effect transistors (NSFETs) are fabricated, with two stacking nanosheet channel, in which two parallel MoS2 channels are controlled by three gate electrodes simultaneously. By building a comprehensive framework, the feasibility of replacing silicon-based comp...
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| Format: | Article |
| Language: | English |
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SpringerOpen
2025-03-01
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| Series: | Nano-Micro Letters |
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| Online Access: | https://doi.org/10.1007/s40820-025-01702-7 |
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| _version_ | 1849234569669115904 |
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| author | Yang Shen Zhejia Zhang Zhujun Yao Mengge Jin Jintian Gao Yuhan Zhao Wenzhong Bao Yabin Sun He Tian |
| author_facet | Yang Shen Zhejia Zhang Zhujun Yao Mengge Jin Jintian Gao Yuhan Zhao Wenzhong Bao Yabin Sun He Tian |
| author_sort | Yang Shen |
| collection | DOAJ |
| description | Highlights A set of MoS2 nanosheet field-effect transistors (NSFETs) are fabricated, with two stacking nanosheet channel, in which two parallel MoS2 channels are controlled by three gate electrodes simultaneously. By building a comprehensive framework, the feasibility of replacing silicon-based complementary field-effect transistors of 1 nm node with 2D-NSFETs provides a 2D technology solution for 1 nm nodes, i.e., “2D eq 1 nm” nodes are verified. The horizontally miniaturized 2D-NSFET achieves a frequency increase of 28% at a fixed power consumption and also obtains a similar trend in 16-bit RISC-V CPU. |
| format | Article |
| id | doaj-art-d7f383bad26c46aaafbceb27eaf02def |
| institution | Kabale University |
| issn | 2311-6706 2150-5551 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nano-Micro Letters |
| spelling | doaj-art-d7f383bad26c46aaafbceb27eaf02def2025-08-20T04:03:06ZengSpringerOpenNano-Micro Letters2311-67062150-55512025-03-0117111210.1007/s40820-025-01702-7A Valuable and Low-Budget Process Scheme of Equivalized 1 nm Technology Node Based on 2D MaterialsYang Shen0Zhejia Zhang1Zhujun Yao2Mengge Jin3Jintian Gao4Yuhan Zhao5Wenzhong Bao6Yabin Sun7He Tian8College of Integrated Circuit Science and Engineering, Shanghai Key Laboratory of Multidimensional Information Processing, East China Normal UniversityState Key Laboratory of ASIC and System, School of Microelectronics, Fudan UniversityInstitute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua UniversityCollege of Integrated Circuit Science and Engineering, Shanghai Key Laboratory of Multidimensional Information Processing, East China Normal UniversityInstitute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua UniversityInstitute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua UniversityState Key Laboratory of ASIC and System, School of Microelectronics, Fudan UniversityCollege of Integrated Circuit Science and Engineering, Shanghai Key Laboratory of Multidimensional Information Processing, East China Normal UniversityInstitute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua UniversityHighlights A set of MoS2 nanosheet field-effect transistors (NSFETs) are fabricated, with two stacking nanosheet channel, in which two parallel MoS2 channels are controlled by three gate electrodes simultaneously. By building a comprehensive framework, the feasibility of replacing silicon-based complementary field-effect transistors of 1 nm node with 2D-NSFETs provides a 2D technology solution for 1 nm nodes, i.e., “2D eq 1 nm” nodes are verified. The horizontally miniaturized 2D-NSFET achieves a frequency increase of 28% at a fixed power consumption and also obtains a similar trend in 16-bit RISC-V CPU.https://doi.org/10.1007/s40820-025-01702-7Two-dimensional semiconductors1 nm technology nodeNanosheet field-effect transistorsComplementary field-effect transistorsHorizontal scaling |
| spellingShingle | Yang Shen Zhejia Zhang Zhujun Yao Mengge Jin Jintian Gao Yuhan Zhao Wenzhong Bao Yabin Sun He Tian A Valuable and Low-Budget Process Scheme of Equivalized 1 nm Technology Node Based on 2D Materials Nano-Micro Letters Two-dimensional semiconductors 1 nm technology node Nanosheet field-effect transistors Complementary field-effect transistors Horizontal scaling |
| title | A Valuable and Low-Budget Process Scheme of Equivalized 1 nm Technology Node Based on 2D Materials |
| title_full | A Valuable and Low-Budget Process Scheme of Equivalized 1 nm Technology Node Based on 2D Materials |
| title_fullStr | A Valuable and Low-Budget Process Scheme of Equivalized 1 nm Technology Node Based on 2D Materials |
| title_full_unstemmed | A Valuable and Low-Budget Process Scheme of Equivalized 1 nm Technology Node Based on 2D Materials |
| title_short | A Valuable and Low-Budget Process Scheme of Equivalized 1 nm Technology Node Based on 2D Materials |
| title_sort | valuable and low budget process scheme of equivalized 1 nm technology node based on 2d materials |
| topic | Two-dimensional semiconductors 1 nm technology node Nanosheet field-effect transistors Complementary field-effect transistors Horizontal scaling |
| url | https://doi.org/10.1007/s40820-025-01702-7 |
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