Thermal Stability and Tribological Performance of DLC-Si–O Films
The thermal stability and tribological performance of silicon- and oxygen-incorporated diamond-like carbon films were investigated. The DLC-Si-O films were deposited using plasma-based ion implantation (PBII) method. The deposited...
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| Format: | Article |
| Language: | English |
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Wiley
2011-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2011/483437 |
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| author | Nutthanun Moolsradoo Shinya Abe Shuichi Watanabe |
| author_facet | Nutthanun Moolsradoo Shinya Abe Shuichi Watanabe |
| author_sort | Nutthanun Moolsradoo |
| collection | DOAJ |
| description | The thermal stability and tribological
performance of silicon- and oxygen-incorporated
diamond-like carbon films were investigated. The
DLC-Si-O films were deposited using plasma-based
ion implantation (PBII) method. The deposited
films were annealed at 400°C,
600°C, and
750°C for 1 hour in vacuum, in
argon, and in air atmospheres. Film properties
were investigated using the Fourier transforms
infrared spectroscopy, Raman spectroscopy, energy
dispersive X-ray spectroscopy, and a ball-on-disk
friction tester. The structures of the DLC-Si-O
films with a low Si content
(≤25
at.%Si,
≤1
at.%O) and high Si content
(>25
at.%Si,
>1
at.%O) were not affected by the thermal
annealing in vacuum at 400°C and
600°C, respectively, while they
were affected by thermal annealing in argon and in
air at 400°C. Film with 34
at.%Si and 9 at.%O after annealing
demonstrated almost constant atomic contents until
annealing at 600°C in vacuum.
The friction coefficient of DLC-Si–O films
with 34 at.%Si and 9 at.%O was shown to be
relatively stable, with a friction coefficient of
0.04 before annealing and 0.05 after annealing at
600°C in vacuum. Moreover, the
low friction coefficient of film annealed at
600°C in vacuum with 34
at.%Si and 9 at.%O was corresponded with
low wear rate of 1.85
×
10−7 mm3/Nm. |
| format | Article |
| id | doaj-art-d79ac9fcd8e142fd90e8bf0772085435 |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2011-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-d79ac9fcd8e142fd90e8bf07720854352025-02-03T01:05:31ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422011-01-01201110.1155/2011/483437483437Thermal Stability and Tribological Performance of DLC-Si–O FilmsNutthanun Moolsradoo0Shinya Abe1Shuichi Watanabe2Department of Systems Engineering, Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro Machi, Saitama 345-8501, JapanDepartment of Systems Engineering, Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro Machi, Saitama 345-8501, JapanDepartment of Systems Engineering, Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro Machi, Saitama 345-8501, JapanThe thermal stability and tribological performance of silicon- and oxygen-incorporated diamond-like carbon films were investigated. The DLC-Si-O films were deposited using plasma-based ion implantation (PBII) method. The deposited films were annealed at 400°C, 600°C, and 750°C for 1 hour in vacuum, in argon, and in air atmospheres. Film properties were investigated using the Fourier transforms infrared spectroscopy, Raman spectroscopy, energy dispersive X-ray spectroscopy, and a ball-on-disk friction tester. The structures of the DLC-Si-O films with a low Si content (≤25 at.%Si, ≤1 at.%O) and high Si content (>25 at.%Si, >1 at.%O) were not affected by the thermal annealing in vacuum at 400°C and 600°C, respectively, while they were affected by thermal annealing in argon and in air at 400°C. Film with 34 at.%Si and 9 at.%O after annealing demonstrated almost constant atomic contents until annealing at 600°C in vacuum. The friction coefficient of DLC-Si–O films with 34 at.%Si and 9 at.%O was shown to be relatively stable, with a friction coefficient of 0.04 before annealing and 0.05 after annealing at 600°C in vacuum. Moreover, the low friction coefficient of film annealed at 600°C in vacuum with 34 at.%Si and 9 at.%O was corresponded with low wear rate of 1.85 × 10−7 mm3/Nm.http://dx.doi.org/10.1155/2011/483437 |
| spellingShingle | Nutthanun Moolsradoo Shinya Abe Shuichi Watanabe Thermal Stability and Tribological Performance of DLC-Si–O Films Advances in Materials Science and Engineering |
| title | Thermal Stability and Tribological Performance of DLC-Si–O Films |
| title_full | Thermal Stability and Tribological Performance of DLC-Si–O Films |
| title_fullStr | Thermal Stability and Tribological Performance of DLC-Si–O Films |
| title_full_unstemmed | Thermal Stability and Tribological Performance of DLC-Si–O Films |
| title_short | Thermal Stability and Tribological Performance of DLC-Si–O Films |
| title_sort | thermal stability and tribological performance of dlc si o films |
| url | http://dx.doi.org/10.1155/2011/483437 |
| work_keys_str_mv | AT nutthanunmoolsradoo thermalstabilityandtribologicalperformanceofdlcsiofilms AT shinyaabe thermalstabilityandtribologicalperformanceofdlcsiofilms AT shuichiwatanabe thermalstabilityandtribologicalperformanceofdlcsiofilms |