Thermal Stability and Tribological Performance of DLC-Si–O Films
The thermal stability and tribological performance of silicon- and oxygen-incorporated diamond-like carbon films were investigated. The DLC-Si-O films were deposited using plasma-based ion implantation (PBII) method. The deposited...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2011-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2011/483437 |
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| Summary: | The thermal stability and tribological
performance of silicon- and oxygen-incorporated
diamond-like carbon films were investigated. The
DLC-Si-O films were deposited using plasma-based
ion implantation (PBII) method. The deposited
films were annealed at 400°C,
600°C, and
750°C for 1 hour in vacuum, in
argon, and in air atmospheres. Film properties
were investigated using the Fourier transforms
infrared spectroscopy, Raman spectroscopy, energy
dispersive X-ray spectroscopy, and a ball-on-disk
friction tester. The structures of the DLC-Si-O
films with a low Si content
(≤25
at.%Si,
≤1
at.%O) and high Si content
(>25
at.%Si,
>1
at.%O) were not affected by the thermal
annealing in vacuum at 400°C and
600°C, respectively, while they
were affected by thermal annealing in argon and in
air at 400°C. Film with 34
at.%Si and 9 at.%O after annealing
demonstrated almost constant atomic contents until
annealing at 600°C in vacuum.
The friction coefficient of DLC-Si–O films
with 34 at.%Si and 9 at.%O was shown to be
relatively stable, with a friction coefficient of
0.04 before annealing and 0.05 after annealing at
600°C in vacuum. Moreover, the
low friction coefficient of film annealed at
600°C in vacuum with 34
at.%Si and 9 at.%O was corresponded with
low wear rate of 1.85
×
10−7 mm3/Nm. |
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| ISSN: | 1687-8434 1687-8442 |