Production of photosensitive structures based on CdSe nanoparticles and carbon nanotubes by physical methods

The paper shows the possibility of producing photosensitive structures using physical methods without the use of chemical synthesis and vacuum techniques. Suspensions of CdSe nanoparticles were produced by pulsed laser ablation in a liquid medium (chloroform), and layers of semiconductor material (C...

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Main Authors: Oday A.H. Hassoon, Odai N.S. Salman, Vladislav N. Mironyuk, Mikhail V. Pozharov, Tatiana Ya. Karatyshova, Andrey M. Zacharevich, Evgeny G. Glukhovskoy
Format: Article
Language:English
Published: Pensoft Publishers 2025-04-01
Series:Modern Electronic Materials
Online Access:https://moem.pensoft.net/article/133978/download/pdf/
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author Oday A.H. Hassoon
Odai N.S. Salman
Vladislav N. Mironyuk
Mikhail V. Pozharov
Tatiana Ya. Karatyshova
Andrey M. Zacharevich
Evgeny G. Glukhovskoy
author_facet Oday A.H. Hassoon
Odai N.S. Salman
Vladislav N. Mironyuk
Mikhail V. Pozharov
Tatiana Ya. Karatyshova
Andrey M. Zacharevich
Evgeny G. Glukhovskoy
author_sort Oday A.H. Hassoon
collection DOAJ
description The paper shows the possibility of producing photosensitive structures using physical methods without the use of chemical synthesis and vacuum techniques. Suspensions of CdSe nanoparticles were produced by pulsed laser ablation in a liquid medium (chloroform), and layers of semiconductor material (CdSe) and conductive layers (carbon nanotubes) were formed at the gas-liquid interface and transferred to solid substrates by the Langmuir–Schaeffer method. The size of CdSe nanoparticles in the layers ranged from 60 nm to 200 nm, and the bandgap was 2.3 eV. Multilayer film structures consisting of a layer based on synthesized CdSe nanoparticles and a layer of conductive carbon nanotubes, that demonstrated photosensitivity in the optical region, were obtained. The value of current density under lighting at 1 V and –1 V equals 1.25 mA/cm2 and –1.35 mA/cm2, respectively. The maximum ratio of the illumination current density to the dark current value was 13.5 times (at a voltage of 1 V).
format Article
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issn 2452-1779
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publishDate 2025-04-01
publisher Pensoft Publishers
record_format Article
series Modern Electronic Materials
spelling doaj-art-d775c416d1ca462e898cd4fc6f5f611e2025-08-20T02:19:38ZengPensoft PublishersModern Electronic Materials2452-17792025-04-0111131110.3897/j.moem.11.1.133978133978Production of photosensitive structures based on CdSe nanoparticles and carbon nanotubes by physical methodsOday A.H. Hassoon0Odai N.S. Salman1Vladislav N. Mironyuk2Mikhail V. Pozharov3Tatiana Ya. Karatyshova4Andrey M. Zacharevich5Evgeny G. Glukhovskoy6Ministry of Iraqi ElectricityUniversity of TechnologyN.G. Chernyshevsky Saratov State UniversityN.G. Chernyshevsky Saratov State UniversityN.G. Chernyshevsky Saratov State UniversityN.G. Chernyshevsky Saratov State UniversityN.G. Chernyshevsky Saratov State UniversityThe paper shows the possibility of producing photosensitive structures using physical methods without the use of chemical synthesis and vacuum techniques. Suspensions of CdSe nanoparticles were produced by pulsed laser ablation in a liquid medium (chloroform), and layers of semiconductor material (CdSe) and conductive layers (carbon nanotubes) were formed at the gas-liquid interface and transferred to solid substrates by the Langmuir–Schaeffer method. The size of CdSe nanoparticles in the layers ranged from 60 nm to 200 nm, and the bandgap was 2.3 eV. Multilayer film structures consisting of a layer based on synthesized CdSe nanoparticles and a layer of conductive carbon nanotubes, that demonstrated photosensitivity in the optical region, were obtained. The value of current density under lighting at 1 V and –1 V equals 1.25 mA/cm2 and –1.35 mA/cm2, respectively. The maximum ratio of the illumination current density to the dark current value was 13.5 times (at a voltage of 1 V).https://moem.pensoft.net/article/133978/download/pdf/
spellingShingle Oday A.H. Hassoon
Odai N.S. Salman
Vladislav N. Mironyuk
Mikhail V. Pozharov
Tatiana Ya. Karatyshova
Andrey M. Zacharevich
Evgeny G. Glukhovskoy
Production of photosensitive structures based on CdSe nanoparticles and carbon nanotubes by physical methods
Modern Electronic Materials
title Production of photosensitive structures based on CdSe nanoparticles and carbon nanotubes by physical methods
title_full Production of photosensitive structures based on CdSe nanoparticles and carbon nanotubes by physical methods
title_fullStr Production of photosensitive structures based on CdSe nanoparticles and carbon nanotubes by physical methods
title_full_unstemmed Production of photosensitive structures based on CdSe nanoparticles and carbon nanotubes by physical methods
title_short Production of photosensitive structures based on CdSe nanoparticles and carbon nanotubes by physical methods
title_sort production of photosensitive structures based on cdse nanoparticles and carbon nanotubes by physical methods
url https://moem.pensoft.net/article/133978/download/pdf/
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AT odainssalman productionofphotosensitivestructuresbasedoncdsenanoparticlesandcarbonnanotubesbyphysicalmethods
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AT mikhailvpozharov productionofphotosensitivestructuresbasedoncdsenanoparticlesandcarbonnanotubesbyphysicalmethods
AT tatianayakaratyshova productionofphotosensitivestructuresbasedoncdsenanoparticlesandcarbonnanotubesbyphysicalmethods
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