Advanced polynomial Y-function method for precise mobility characterization in 2D FETs
Abstract Accurate extraction of mobility parameters in two-dimensional (2D) transition metal dichalcogenide (TMD)-based field-effect transistors (FETs) is crucial for evaluating their performance and optimizing device design. Conventional mobility extraction methods such as the field-effect mobility...
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Nature Portfolio
2025-07-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-025-13658-0 |
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| author | Jeongyun Jang Yeon Jae Lee Hayoung Roh Sungho Kim |
| author_facet | Jeongyun Jang Yeon Jae Lee Hayoung Roh Sungho Kim |
| author_sort | Jeongyun Jang |
| collection | DOAJ |
| description | Abstract Accurate extraction of mobility parameters in two-dimensional (2D) transition metal dichalcogenide (TMD)-based field-effect transistors (FETs) is crucial for evaluating their performance and optimizing device design. Conventional mobility extraction methods such as the field-effect mobility approach suffer from inaccuracies owing to the influence of series resistance and noise amplification. In this paper, we present an advanced polynomial Y-function methodology for the precise mobility characterization of MoS2 FETs. This methodology enables a systematic discrimination among various scattering mechanisms while precisely extracting the threshold voltage. Through a comparative analysis of back-gate (BG) and top-gate (TG) MoS2 FET configurations, we demonstrated the superior accuracy and consistency of the proposed method compared with conventional approaches. The results revealed that the TG-FET exhibited stronger surface-roughness scattering owing to the intensified transverse electric field from the thinner dielectric layer, leading to pronounced mobility degradation. The polynomial Y-function method successfully isolates key degradation factors, thereby enabling a more comprehensive understanding of the carrier transport mechanisms in 2D FETs. These findings provide a robust framework for optimizing 2D material-based electronic devices, facilitating their integration into next-generation nanoelectronic applications. |
| format | Article |
| id | doaj-art-d75bba0cb39643a89176dfdaf46ace01 |
| institution | Kabale University |
| issn | 2045-2322 |
| language | English |
| publishDate | 2025-07-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj-art-d75bba0cb39643a89176dfdaf46ace012025-08-20T03:43:15ZengNature PortfolioScientific Reports2045-23222025-07-011511910.1038/s41598-025-13658-0Advanced polynomial Y-function method for precise mobility characterization in 2D FETsJeongyun Jang0Yeon Jae Lee1Hayoung Roh2Sungho Kim3Division of Electronic & Semiconductor Engineering, Ewha Womans UniversityDivision of Electronic & Semiconductor Engineering, Ewha Womans UniversityDivision of Electronic & Semiconductor Engineering, Ewha Womans UniversityDivision of Electronic & Semiconductor Engineering, Ewha Womans UniversityAbstract Accurate extraction of mobility parameters in two-dimensional (2D) transition metal dichalcogenide (TMD)-based field-effect transistors (FETs) is crucial for evaluating their performance and optimizing device design. Conventional mobility extraction methods such as the field-effect mobility approach suffer from inaccuracies owing to the influence of series resistance and noise amplification. In this paper, we present an advanced polynomial Y-function methodology for the precise mobility characterization of MoS2 FETs. This methodology enables a systematic discrimination among various scattering mechanisms while precisely extracting the threshold voltage. Through a comparative analysis of back-gate (BG) and top-gate (TG) MoS2 FET configurations, we demonstrated the superior accuracy and consistency of the proposed method compared with conventional approaches. The results revealed that the TG-FET exhibited stronger surface-roughness scattering owing to the intensified transverse electric field from the thinner dielectric layer, leading to pronounced mobility degradation. The polynomial Y-function method successfully isolates key degradation factors, thereby enabling a more comprehensive understanding of the carrier transport mechanisms in 2D FETs. These findings provide a robust framework for optimizing 2D material-based electronic devices, facilitating their integration into next-generation nanoelectronic applications.https://doi.org/10.1038/s41598-025-13658-0 |
| spellingShingle | Jeongyun Jang Yeon Jae Lee Hayoung Roh Sungho Kim Advanced polynomial Y-function method for precise mobility characterization in 2D FETs Scientific Reports |
| title | Advanced polynomial Y-function method for precise mobility characterization in 2D FETs |
| title_full | Advanced polynomial Y-function method for precise mobility characterization in 2D FETs |
| title_fullStr | Advanced polynomial Y-function method for precise mobility characterization in 2D FETs |
| title_full_unstemmed | Advanced polynomial Y-function method for precise mobility characterization in 2D FETs |
| title_short | Advanced polynomial Y-function method for precise mobility characterization in 2D FETs |
| title_sort | advanced polynomial y function method for precise mobility characterization in 2d fets |
| url | https://doi.org/10.1038/s41598-025-13658-0 |
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