The planar anodic Al2O3-ZrO2 nanocomposite capacitor dielectrics for advanced passive device integration
The need for integrated passive devices (IPDs) emerges from the increasing consumer demand for electronic product miniaturization. Metal-insulator-metal (MIM) capacitors are vital components of IPD systems. Developing new materials and technologies is essential for advancing capacitor characteristic...
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| Format: | Article |
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Taylor & Francis Group
2023-12-01
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| Series: | Science and Technology of Advanced Materials |
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| Online Access: | https://www.tandfonline.com/doi/10.1080/14686996.2022.2162324 |
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| author | Kirill Kamnev Zdenek Pytlicek Maria Bendova Jan Prasek Francesc Gispert-Guirado Eduard Llobet Alexander Mozalev |
| author_facet | Kirill Kamnev Zdenek Pytlicek Maria Bendova Jan Prasek Francesc Gispert-Guirado Eduard Llobet Alexander Mozalev |
| author_sort | Kirill Kamnev |
| collection | DOAJ |
| description | The need for integrated passive devices (IPDs) emerges from the increasing consumer demand for electronic product miniaturization. Metal-insulator-metal (MIM) capacitors are vital components of IPD systems. Developing new materials and technologies is essential for advancing capacitor characteristics and co-integrating with other electronic passives. Here we present an innovative electrochemical technology joined with the sputter-deposition of Al and Zr layers to synthesize novel planar nanocomposite metal-oxide dielectrics consisting of ZrO2 nanorods self-embedded into the nanoporous Al2O3 matrix such that its pores are entirely filled with zirconium oxide. The technology is utilized in MIM capacitors characterized by modern surface and interface analysis techniques and electrical measurements. In the 95–480 nm thickness range, the best-achieved MIM device characteristics are the one-layer capacitance density of 112 nF·cm−2, the loss tangent of 4·10−3 at frequencies up to 1 MHz, the leakage current density of 40 pA·cm−2, the breakdown field strength of up to 10 MV·cm−1, the energy density of 100 J·cm−3, the quadratic voltage coefficient of capacitance of 4 ppm·V−2, and the temperature coefficient of capacitance of 480 ppm·K−1 at 293–423 K at 1 MHz. The outstanding performance, stability, and tunable capacitors’ characteristics allow for their application in low-pass filters, coupling/decoupling/bypass circuits, RC oscillators, energy-storage devices, ultrafast charge/discharge units, or high-precision analog-to-digital converters. The capacitor technology based on the non-porous planar anodic-oxide dielectrics complements the electrochemical conception of IPDs that combined, until now, the anodized aluminum interconnection, microresistors, and microinductors, all co-related in one system for use in portable electronic devices. |
| format | Article |
| id | doaj-art-d71da1ebe58e45beb7ecd0eb23c7a1b5 |
| institution | Kabale University |
| issn | 1468-6996 1878-5514 |
| language | English |
| publishDate | 2023-12-01 |
| publisher | Taylor & Francis Group |
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| series | Science and Technology of Advanced Materials |
| spelling | doaj-art-d71da1ebe58e45beb7ecd0eb23c7a1b52025-08-20T03:40:17ZengTaylor & Francis GroupScience and Technology of Advanced Materials1468-69961878-55142023-12-0124110.1080/14686996.2022.2162324The planar anodic Al2O3-ZrO2 nanocomposite capacitor dielectrics for advanced passive device integrationKirill Kamnev0Zdenek Pytlicek1Maria Bendova2Jan Prasek3Francesc Gispert-Guirado4Eduard Llobet5Alexander Mozalev6CEITEC – Central European Institute of Technology, Brno University of Technology, Brno, Czech RepublicCEITEC – Central European Institute of Technology, Brno University of Technology, Brno, Czech RepublicCEITEC – Central European Institute of Technology, Brno University of Technology, Brno, Czech RepublicCEITEC – Central European Institute of Technology, Brno University of Technology, Brno, Czech RepublicSRCiT, University Rovira i Virgili, Tarragona, SpainMINOS-EMaS, University Rovira i Virgili, Tarragona, SpainCEITEC – Central European Institute of Technology, Brno University of Technology, Brno, Czech RepublicThe need for integrated passive devices (IPDs) emerges from the increasing consumer demand for electronic product miniaturization. Metal-insulator-metal (MIM) capacitors are vital components of IPD systems. Developing new materials and technologies is essential for advancing capacitor characteristics and co-integrating with other electronic passives. Here we present an innovative electrochemical technology joined with the sputter-deposition of Al and Zr layers to synthesize novel planar nanocomposite metal-oxide dielectrics consisting of ZrO2 nanorods self-embedded into the nanoporous Al2O3 matrix such that its pores are entirely filled with zirconium oxide. The technology is utilized in MIM capacitors characterized by modern surface and interface analysis techniques and electrical measurements. In the 95–480 nm thickness range, the best-achieved MIM device characteristics are the one-layer capacitance density of 112 nF·cm−2, the loss tangent of 4·10−3 at frequencies up to 1 MHz, the leakage current density of 40 pA·cm−2, the breakdown field strength of up to 10 MV·cm−1, the energy density of 100 J·cm−3, the quadratic voltage coefficient of capacitance of 4 ppm·V−2, and the temperature coefficient of capacitance of 480 ppm·K−1 at 293–423 K at 1 MHz. The outstanding performance, stability, and tunable capacitors’ characteristics allow for their application in low-pass filters, coupling/decoupling/bypass circuits, RC oscillators, energy-storage devices, ultrafast charge/discharge units, or high-precision analog-to-digital converters. The capacitor technology based on the non-porous planar anodic-oxide dielectrics complements the electrochemical conception of IPDs that combined, until now, the anodized aluminum interconnection, microresistors, and microinductors, all co-related in one system for use in portable electronic devices.https://www.tandfonline.com/doi/10.1080/14686996.2022.2162324Anodizingporous anodic aluminaAl2O3-ZrO2nanocomposite filmsMIM capacitorsdielectric |
| spellingShingle | Kirill Kamnev Zdenek Pytlicek Maria Bendova Jan Prasek Francesc Gispert-Guirado Eduard Llobet Alexander Mozalev The planar anodic Al2O3-ZrO2 nanocomposite capacitor dielectrics for advanced passive device integration Science and Technology of Advanced Materials Anodizing porous anodic alumina Al2O3-ZrO2 nanocomposite films MIM capacitors dielectric |
| title | The planar anodic Al2O3-ZrO2 nanocomposite capacitor dielectrics for advanced passive device integration |
| title_full | The planar anodic Al2O3-ZrO2 nanocomposite capacitor dielectrics for advanced passive device integration |
| title_fullStr | The planar anodic Al2O3-ZrO2 nanocomposite capacitor dielectrics for advanced passive device integration |
| title_full_unstemmed | The planar anodic Al2O3-ZrO2 nanocomposite capacitor dielectrics for advanced passive device integration |
| title_short | The planar anodic Al2O3-ZrO2 nanocomposite capacitor dielectrics for advanced passive device integration |
| title_sort | planar anodic al2o3 zro2 nanocomposite capacitor dielectrics for advanced passive device integration |
| topic | Anodizing porous anodic alumina Al2O3-ZrO2 nanocomposite films MIM capacitors dielectric |
| url | https://www.tandfonline.com/doi/10.1080/14686996.2022.2162324 |
| work_keys_str_mv | AT kirillkamnev theplanaranodical2o3zro2nanocompositecapacitordielectricsforadvancedpassivedeviceintegration AT zdenekpytlicek theplanaranodical2o3zro2nanocompositecapacitordielectricsforadvancedpassivedeviceintegration AT mariabendova theplanaranodical2o3zro2nanocompositecapacitordielectricsforadvancedpassivedeviceintegration AT janprasek theplanaranodical2o3zro2nanocompositecapacitordielectricsforadvancedpassivedeviceintegration AT francescgispertguirado theplanaranodical2o3zro2nanocompositecapacitordielectricsforadvancedpassivedeviceintegration AT eduardllobet theplanaranodical2o3zro2nanocompositecapacitordielectricsforadvancedpassivedeviceintegration AT alexandermozalev theplanaranodical2o3zro2nanocompositecapacitordielectricsforadvancedpassivedeviceintegration AT kirillkamnev planaranodical2o3zro2nanocompositecapacitordielectricsforadvancedpassivedeviceintegration AT zdenekpytlicek planaranodical2o3zro2nanocompositecapacitordielectricsforadvancedpassivedeviceintegration AT mariabendova planaranodical2o3zro2nanocompositecapacitordielectricsforadvancedpassivedeviceintegration AT janprasek planaranodical2o3zro2nanocompositecapacitordielectricsforadvancedpassivedeviceintegration AT francescgispertguirado planaranodical2o3zro2nanocompositecapacitordielectricsforadvancedpassivedeviceintegration AT eduardllobet planaranodical2o3zro2nanocompositecapacitordielectricsforadvancedpassivedeviceintegration AT alexandermozalev planaranodical2o3zro2nanocompositecapacitordielectricsforadvancedpassivedeviceintegration |