Investigation of Current-Voltage Characteristics of Ni/GaN Schottky Barrier Diodes for Potential HEMT Applications
In the present work, the I-V characteristics of Ni/GaN Schottky diodes have been studied. The Schottky diodes, having different sizes using Ni/Au and ohmic contacts using Ti/Al/Ni/Au were made on n-GaN. The GaN was epitaxially grown on c-plane sapphire by metal organic chemical vapor deposition (MOC...
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Sumy State University
2011-01-01
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| Series: | Журнал нано- та електронної фізики |
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| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%204/articles/jnep_2011_V3_N1(Part4)_671-675.pdf |
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| author | Ashish Kumar Seema Vinayak R. Singh |
| author_facet | Ashish Kumar Seema Vinayak R. Singh |
| author_sort | Ashish Kumar |
| collection | DOAJ |
| description | In the present work, the I-V characteristics of Ni/GaN Schottky diodes have been studied. The Schottky diodes, having different sizes using Ni/Au and ohmic contacts using Ti/Al/Ni/Au were made on n-GaN. The GaN was epitaxially grown on c-plane sapphire by metal organic chemical vapor deposition (MOCVD) technique and had a thickness of about 3.7 µm. The calculated ideality factor and barrier height from current-voltage (I-V) characteristics (at 300 K) for two GaN Schottky diodes were close to ~1.3 and ~ 0.8 eV respectively. A high reverse leakage current in the order of 10 – 4A/cm2 (at – 1 V) was observed in both diodes. A careful analysis of forward bias I-V characteristics showed very high series resistance and calculation for ideality factor indicated presence of other current transport mechanism apart from thermionic model at room temperature. |
| format | Article |
| id | doaj-art-d71d82b6931246efae284d50ba72f7a4 |
| institution | Kabale University |
| issn | 2077-6772 |
| language | English |
| publishDate | 2011-01-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-d71d82b6931246efae284d50ba72f7a42025-08-20T03:24:56ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722011-01-0131671675Investigation of Current-Voltage Characteristics of Ni/GaN Schottky Barrier Diodes for Potential HEMT ApplicationsAshish KumarSeema VinayakR. SinghIn the present work, the I-V characteristics of Ni/GaN Schottky diodes have been studied. The Schottky diodes, having different sizes using Ni/Au and ohmic contacts using Ti/Al/Ni/Au were made on n-GaN. The GaN was epitaxially grown on c-plane sapphire by metal organic chemical vapor deposition (MOCVD) technique and had a thickness of about 3.7 µm. The calculated ideality factor and barrier height from current-voltage (I-V) characteristics (at 300 K) for two GaN Schottky diodes were close to ~1.3 and ~ 0.8 eV respectively. A high reverse leakage current in the order of 10 – 4A/cm2 (at – 1 V) was observed in both diodes. A careful analysis of forward bias I-V characteristics showed very high series resistance and calculation for ideality factor indicated presence of other current transport mechanism apart from thermionic model at room temperature.http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%204/articles/jnep_2011_V3_N1(Part4)_671-675.pdfGaNSchottky diodeThermionicCurrent-voltageXRDAFM |
| spellingShingle | Ashish Kumar Seema Vinayak R. Singh Investigation of Current-Voltage Characteristics of Ni/GaN Schottky Barrier Diodes for Potential HEMT Applications Журнал нано- та електронної фізики GaN Schottky diode Thermionic Current-voltage XRD AFM |
| title | Investigation of Current-Voltage Characteristics of Ni/GaN Schottky Barrier Diodes for Potential HEMT Applications |
| title_full | Investigation of Current-Voltage Characteristics of Ni/GaN Schottky Barrier Diodes for Potential HEMT Applications |
| title_fullStr | Investigation of Current-Voltage Characteristics of Ni/GaN Schottky Barrier Diodes for Potential HEMT Applications |
| title_full_unstemmed | Investigation of Current-Voltage Characteristics of Ni/GaN Schottky Barrier Diodes for Potential HEMT Applications |
| title_short | Investigation of Current-Voltage Characteristics of Ni/GaN Schottky Barrier Diodes for Potential HEMT Applications |
| title_sort | investigation of current voltage characteristics of ni gan schottky barrier diodes for potential hemt applications |
| topic | GaN Schottky diode Thermionic Current-voltage XRD AFM |
| url | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%204/articles/jnep_2011_V3_N1(Part4)_671-675.pdf |
| work_keys_str_mv | AT ashishkumar investigationofcurrentvoltagecharacteristicsofniganschottkybarrierdiodesforpotentialhemtapplications AT seemavinayak investigationofcurrentvoltagecharacteristicsofniganschottkybarrierdiodesforpotentialhemtapplications AT rsingh investigationofcurrentvoltagecharacteristicsofniganschottkybarrierdiodesforpotentialhemtapplications |