High-Mobility Tellurium Thin-Film Transistor: Oxygen Scavenger Effect Induced by a Metal-Capping Layer
With the ongoing development of electronic devices, there is an increasing demand for new semiconductors beyond traditional silicon. A key element in electronic circuits, complementary metal-oxide semiconductor (CMOS), utilizes both n-type and p-type semiconductors. While the advancements in n-type...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-03-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/15/6/418 |
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