High-Mobility Tellurium Thin-Film Transistor: Oxygen Scavenger Effect Induced by a Metal-Capping Layer
With the ongoing development of electronic devices, there is an increasing demand for new semiconductors beyond traditional silicon. A key element in electronic circuits, complementary metal-oxide semiconductor (CMOS), utilizes both n-type and p-type semiconductors. While the advancements in n-type...
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MDPI AG
2025-03-01
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| author | Seung-Min Lee Seong Cheol Jang Ji-Min Park Jaewon Park Nayoung Choi Kwun-Bum Chung Jung Woo Lee Hyun-Suk Kim |
| author_facet | Seung-Min Lee Seong Cheol Jang Ji-Min Park Jaewon Park Nayoung Choi Kwun-Bum Chung Jung Woo Lee Hyun-Suk Kim |
| author_sort | Seung-Min Lee |
| collection | DOAJ |
| description | With the ongoing development of electronic devices, there is an increasing demand for new semiconductors beyond traditional silicon. A key element in electronic circuits, complementary metal-oxide semiconductor (CMOS), utilizes both n-type and p-type semiconductors. While the advancements in n-type semiconductors have been substantial, the development of high-mobility p-type semiconductors has lagged behind. Recently, tellurium (Te) has been recognized as a promising candidate due to its superior electrical properties and the capability for large-area deposition via vacuum processes. In this work, an innovative approach involving the addition of a metal-capping layer onto Te thin-film transistors (TFTs) is proposed, which significantly enhances their electrical characteristics. In particular, the application of an indium (In) metal-capping layer has led to a dramatic increase in the field-effect mobility of Te TFTs from 2.68 to 33.54 cm<sup>2</sup>/Vs. This improvement is primarily due to the oxygen scavenger effect, which effectively minimizes oxidation and eliminates oxygen from the Te layer, resulting in the production of high-quality Te thin films. This progress in high-mobility p-type semiconductors is promising for the advancement of high-performance electronic devices in various applications and industries. |
| format | Article |
| id | doaj-art-d70077c5489a4cc5b9617e3b4c24b4e4 |
| institution | DOAJ |
| issn | 2079-4991 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj-art-d70077c5489a4cc5b9617e3b4c24b4e42025-08-20T02:42:23ZengMDPI AGNanomaterials2079-49912025-03-0115641810.3390/nano15060418High-Mobility Tellurium Thin-Film Transistor: Oxygen Scavenger Effect Induced by a Metal-Capping LayerSeung-Min Lee0Seong Cheol Jang1Ji-Min Park2Jaewon Park3Nayoung Choi4Kwun-Bum Chung5Jung Woo Lee6Hyun-Suk Kim7Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Republic of KoreaDepartment of Energy and Materials Engineering, Dongguk University, Seoul 04620, Republic of KoreaDepartment of Energy and Materials Engineering, Dongguk University, Seoul 04620, Republic of KoreaDepartment of Energy and Materials Engineering, Dongguk University, Seoul 04620, Republic of KoreaDepartment of Physics, Dongguk University, Seoul 04620, Republic of KoreaDepartment of Physics, Dongguk University, Seoul 04620, Republic of KoreaSchool of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of KoreaDepartment of Energy and Materials Engineering, Dongguk University, Seoul 04620, Republic of KoreaWith the ongoing development of electronic devices, there is an increasing demand for new semiconductors beyond traditional silicon. A key element in electronic circuits, complementary metal-oxide semiconductor (CMOS), utilizes both n-type and p-type semiconductors. While the advancements in n-type semiconductors have been substantial, the development of high-mobility p-type semiconductors has lagged behind. Recently, tellurium (Te) has been recognized as a promising candidate due to its superior electrical properties and the capability for large-area deposition via vacuum processes. In this work, an innovative approach involving the addition of a metal-capping layer onto Te thin-film transistors (TFTs) is proposed, which significantly enhances their electrical characteristics. In particular, the application of an indium (In) metal-capping layer has led to a dramatic increase in the field-effect mobility of Te TFTs from 2.68 to 33.54 cm<sup>2</sup>/Vs. This improvement is primarily due to the oxygen scavenger effect, which effectively minimizes oxidation and eliminates oxygen from the Te layer, resulting in the production of high-quality Te thin films. This progress in high-mobility p-type semiconductors is promising for the advancement of high-performance electronic devices in various applications and industries.https://www.mdpi.com/2079-4991/15/6/418p-type semiconductortelluriumhigh mobilitymetal-capping layerthin-film transistors |
| spellingShingle | Seung-Min Lee Seong Cheol Jang Ji-Min Park Jaewon Park Nayoung Choi Kwun-Bum Chung Jung Woo Lee Hyun-Suk Kim High-Mobility Tellurium Thin-Film Transistor: Oxygen Scavenger Effect Induced by a Metal-Capping Layer Nanomaterials p-type semiconductor tellurium high mobility metal-capping layer thin-film transistors |
| title | High-Mobility Tellurium Thin-Film Transistor: Oxygen Scavenger Effect Induced by a Metal-Capping Layer |
| title_full | High-Mobility Tellurium Thin-Film Transistor: Oxygen Scavenger Effect Induced by a Metal-Capping Layer |
| title_fullStr | High-Mobility Tellurium Thin-Film Transistor: Oxygen Scavenger Effect Induced by a Metal-Capping Layer |
| title_full_unstemmed | High-Mobility Tellurium Thin-Film Transistor: Oxygen Scavenger Effect Induced by a Metal-Capping Layer |
| title_short | High-Mobility Tellurium Thin-Film Transistor: Oxygen Scavenger Effect Induced by a Metal-Capping Layer |
| title_sort | high mobility tellurium thin film transistor oxygen scavenger effect induced by a metal capping layer |
| topic | p-type semiconductor tellurium high mobility metal-capping layer thin-film transistors |
| url | https://www.mdpi.com/2079-4991/15/6/418 |
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