High-Mobility Tellurium Thin-Film Transistor: Oxygen Scavenger Effect Induced by a Metal-Capping Layer
With the ongoing development of electronic devices, there is an increasing demand for new semiconductors beyond traditional silicon. A key element in electronic circuits, complementary metal-oxide semiconductor (CMOS), utilizes both n-type and p-type semiconductors. While the advancements in n-type...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-03-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/15/6/418 |
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| Summary: | With the ongoing development of electronic devices, there is an increasing demand for new semiconductors beyond traditional silicon. A key element in electronic circuits, complementary metal-oxide semiconductor (CMOS), utilizes both n-type and p-type semiconductors. While the advancements in n-type semiconductors have been substantial, the development of high-mobility p-type semiconductors has lagged behind. Recently, tellurium (Te) has been recognized as a promising candidate due to its superior electrical properties and the capability for large-area deposition via vacuum processes. In this work, an innovative approach involving the addition of a metal-capping layer onto Te thin-film transistors (TFTs) is proposed, which significantly enhances their electrical characteristics. In particular, the application of an indium (In) metal-capping layer has led to a dramatic increase in the field-effect mobility of Te TFTs from 2.68 to 33.54 cm<sup>2</sup>/Vs. This improvement is primarily due to the oxygen scavenger effect, which effectively minimizes oxidation and eliminates oxygen from the Te layer, resulting in the production of high-quality Te thin films. This progress in high-mobility p-type semiconductors is promising for the advancement of high-performance electronic devices in various applications and industries. |
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| ISSN: | 2079-4991 |