Nitrogen-vacancy centers in epitaxial laterally overgrown diamond: towards up-scaling of color center-based quantum technologies

Nitrogen-vacancy centers in epitaxial laterally overgrown diamond: towards up-scaling of color center-based quantum technologies

Providing high-quality, single-crystal diamond (SCD) with a large area is desirable for up-scaling quantum technology applications that rely on color centers in diamond. Growth methods aiming to increase the area of SCD are an active research area. Native color centers offer a sensitive probe for lo...

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Bibliographic Details
Main Authors: Nimba Oshnik, Sebastian Westrich, Nina Burmeister, Oliver Roman Opaluch, Lahcene Mehmel, Riadh Issaoui, Alexandre Tallaire, Ovidiu Brinza, Jocelyn Achard, Elke Neu
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Materials for Quantum Technology
Subjects:
diamond
nitrogen vacancy center
epitaxy
spin coherence
strain
Online Access:https://doi.org/10.1088/2633-4356/adce50
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