Nitrogen-vacancy centers in epitaxial laterally overgrown diamond: towards up-scaling of color center-based quantum technologies
Providing high-quality, single-crystal diamond (SCD) with a large area is desirable for up-scaling quantum technology applications that rely on color centers in diamond. Growth methods aiming to increase the area of SCD are an active research area. Native color centers offer a sensitive probe for lo...
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| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | Materials for Quantum Technology |
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| Online Access: | https://doi.org/10.1088/2633-4356/adce50 |
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| author | Nimba Oshnik Sebastian Westrich Nina Burmeister Oliver Roman Opaluch Lahcene Mehmel Riadh Issaoui Alexandre Tallaire Ovidiu Brinza Jocelyn Achard Elke Neu |
| author_facet | Nimba Oshnik Sebastian Westrich Nina Burmeister Oliver Roman Opaluch Lahcene Mehmel Riadh Issaoui Alexandre Tallaire Ovidiu Brinza Jocelyn Achard Elke Neu |
| author_sort | Nimba Oshnik |
| collection | DOAJ |
| description | Providing high-quality, single-crystal diamond (SCD) with a large area is desirable for up-scaling quantum technology applications that rely on color centers in diamond. Growth methods aiming to increase the area of SCD are an active research area. Native color centers offer a sensitive probe for local crystal quality in such novel materials e.g. via their reaction to stress. In this work, we investigate individual native nitrogen-vacancy (NV) centers in SCD layers manufactured via laterally overgrowing hole arrays in a heteroepitaxially grown large-scale substrate. Heteroepitaxy has become a common tool for growing large SCDs; however, achieving the high crystal quality needed for quantum applications remains a challenge. In the overgrown layer, we identify NV centers with spin-decoherence times in the order of hundreds of µ s, comparable to high-purity homoepitaxial SCD. We quantify the effective crystal stress in different regions of the overgrown layer, indicating a low stress overall and a stress reduction in the diamond layer above the holes. |
| format | Article |
| id | doaj-art-d6eb8b64b08e40fc83ea51c42a81d931 |
| institution | OA Journals |
| issn | 2633-4356 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials for Quantum Technology |
| spelling | doaj-art-d6eb8b64b08e40fc83ea51c42a81d9312025-08-20T02:18:28ZengIOP PublishingMaterials for Quantum Technology2633-43562025-01-015202520110.1088/2633-4356/adce50Nitrogen-vacancy centers in epitaxial laterally overgrown diamond: towards up-scaling of color center-based quantum technologiesNimba Oshnik0https://orcid.org/0009-0008-6495-8951Sebastian Westrich1Nina Burmeister2https://orcid.org/0009-0007-8638-8649Oliver Roman Opaluch3Lahcene Mehmel4https://orcid.org/0000-0001-5791-168XRiadh Issaoui5Alexandre Tallaire6Ovidiu Brinza7Jocelyn Achard8https://orcid.org/0000-0001-7000-7230Elke Neu9https://orcid.org/0000-0003-1904-3206Department of Physics and Research Center OPTIMAS , Rheinland-Pfälzische Technische Universität Kaiserslautern-Landau, 67663 Kaiserslautern, Germany; Institute for Quantum Control (PGI-8) , Forschungszentrum Jülich, 52428 Jülich, Germany; Institute for Quantum Computation and Analytics (PGI-12) , Forschungszentrum Jülich, 52428 Jülich, GermanyDepartment of Physics and Research Center OPTIMAS , Rheinland-Pfälzische Technische Universität Kaiserslautern-Landau, 67663 Kaiserslautern, GermanyDepartment of Physics and Research Center OPTIMAS , Rheinland-Pfälzische Technische Universität Kaiserslautern-Landau, 67663 Kaiserslautern, Germany; Current address: Universität des Saarlandes, Campus Homburg , 66421 Homburg, GermanyDepartment of Physics and Research Center OPTIMAS , Rheinland-Pfälzische Technische Universität Kaiserslautern-Landau, 67663 Kaiserslautern, GermanyDepartment of Physics and Research Center OPTIMAS , Rheinland-Pfälzische Technische Universität Kaiserslautern-Landau, 67663 Kaiserslautern, Germany; Laboratoire des Sciences des Procédés et des Matériaux—LSPM—Villetaneuse , 93430 Villetaneuse, FranceLaboratoire des Sciences des Procédés et des Matériaux—LSPM—CNRS, Université Sorbonne Paris Nord , 93430 Villetaneuse, FranceLaboratoire des Sciences des Procédés et des Matériaux—LSPM—CNRS, Université Sorbonne Paris Nord , 93430 Villetaneuse, France; Ecole Nationale Supérieure de Chimie de Paris—Chimie Paristech, Université Paris Sciences et Lettres (PSL) , 75231 Paris, FranceLaboratoire des Sciences des Procédés et des Matériaux—LSPM—CNRS, Université Sorbonne Paris Nord , 93430 Villetaneuse, FranceLaboratoire des Sciences des Procédés et des Matériaux—LSPM—CNRS, Université Sorbonne Paris Nord , 93430 Villetaneuse, FranceDepartment of Physics and Research Center OPTIMAS , Rheinland-Pfälzische Technische Universität Kaiserslautern-Landau, 67663 Kaiserslautern, GermanyProviding high-quality, single-crystal diamond (SCD) with a large area is desirable for up-scaling quantum technology applications that rely on color centers in diamond. Growth methods aiming to increase the area of SCD are an active research area. Native color centers offer a sensitive probe for local crystal quality in such novel materials e.g. via their reaction to stress. In this work, we investigate individual native nitrogen-vacancy (NV) centers in SCD layers manufactured via laterally overgrowing hole arrays in a heteroepitaxially grown large-scale substrate. Heteroepitaxy has become a common tool for growing large SCDs; however, achieving the high crystal quality needed for quantum applications remains a challenge. In the overgrown layer, we identify NV centers with spin-decoherence times in the order of hundreds of µ s, comparable to high-purity homoepitaxial SCD. We quantify the effective crystal stress in different regions of the overgrown layer, indicating a low stress overall and a stress reduction in the diamond layer above the holes.https://doi.org/10.1088/2633-4356/adce50diamondnitrogen vacancy centerepitaxyspin coherencestrain |
| spellingShingle | Nimba Oshnik Sebastian Westrich Nina Burmeister Oliver Roman Opaluch Lahcene Mehmel Riadh Issaoui Alexandre Tallaire Ovidiu Brinza Jocelyn Achard Elke Neu Nitrogen-vacancy centers in epitaxial laterally overgrown diamond: towards up-scaling of color center-based quantum technologies Materials for Quantum Technology diamond nitrogen vacancy center epitaxy spin coherence strain |
| title | Nitrogen-vacancy centers in epitaxial laterally overgrown diamond: towards up-scaling of color center-based quantum technologies |
| title_full | Nitrogen-vacancy centers in epitaxial laterally overgrown diamond: towards up-scaling of color center-based quantum technologies |
| title_fullStr | Nitrogen-vacancy centers in epitaxial laterally overgrown diamond: towards up-scaling of color center-based quantum technologies |
| title_full_unstemmed | Nitrogen-vacancy centers in epitaxial laterally overgrown diamond: towards up-scaling of color center-based quantum technologies |
| title_short | Nitrogen-vacancy centers in epitaxial laterally overgrown diamond: towards up-scaling of color center-based quantum technologies |
| title_sort | nitrogen vacancy centers in epitaxial laterally overgrown diamond towards up scaling of color center based quantum technologies |
| topic | diamond nitrogen vacancy center epitaxy spin coherence strain |
| url | https://doi.org/10.1088/2633-4356/adce50 |
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