Nitrogen-vacancy centers in epitaxial laterally overgrown diamond: towards up-scaling of color center-based quantum technologies
Providing high-quality, single-crystal diamond (SCD) with a large area is desirable for up-scaling quantum technology applications that rely on color centers in diamond. Growth methods aiming to increase the area of SCD are an active research area. Native color centers offer a sensitive probe for lo...
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| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Materials for Quantum Technology |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2633-4356/adce50 |
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| Summary: | Providing high-quality, single-crystal diamond (SCD) with a large area is desirable for up-scaling quantum technology applications that rely on color centers in diamond. Growth methods aiming to increase the area of SCD are an active research area. Native color centers offer a sensitive probe for local crystal quality in such novel materials e.g. via their reaction to stress. In this work, we investigate individual native nitrogen-vacancy (NV) centers in SCD layers manufactured via laterally overgrowing hole arrays in a heteroepitaxially grown large-scale substrate. Heteroepitaxy has become a common tool for growing large SCDs; however, achieving the high crystal quality needed for quantum applications remains a challenge. In the overgrown layer, we identify NV centers with spin-decoherence times in the order of hundreds of µ s, comparable to high-purity homoepitaxial SCD. We quantify the effective crystal stress in different regions of the overgrown layer, indicating a low stress overall and a stress reduction in the diamond layer above the holes. |
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| ISSN: | 2633-4356 |