Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching
The homogeneity of emitters is very important for the performance of field emission (FE) devices. Reactive-ion etching (RIE) and oxidation have significant influences on the geometry of silicon tips. The RIE influences mainly the anisotropy of the emitters. Pressure has a strong impact on the anisot...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2014/948708 |
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| _version_ | 1850174890269736960 |
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| author | Robert Damian Lawrowski Christian Prommesberger Christoph Langer Florian Dams Rupert Schreiner |
| author_facet | Robert Damian Lawrowski Christian Prommesberger Christoph Langer Florian Dams Rupert Schreiner |
| author_sort | Robert Damian Lawrowski |
| collection | DOAJ |
| description | The homogeneity of emitters is very important for the performance of field emission (FE) devices. Reactive-ion etching (RIE) and oxidation have significant influences on the geometry of silicon tips. The RIE influences mainly the anisotropy of the emitters. Pressure has a strong impact on the anisotropic factor. Reducing the pressure results in a higher anisotropy, but the etch rate is also lower. A longer time of etching compensates this effect. Furthermore an improvement of homogeneity was observed. The impact of uprating is quite low for the anisotropic factor, but significant for the homogeneity. At low power the height and undercut of the emitters are more constant over the whole wafer. The oxidation itself is very homogeneous and has no observable effect on further variation of the homogeneity. This modified fabrication process allows solving the problem of inhomogeneity of previous field emission arrays. |
| format | Article |
| id | doaj-art-d6d5ed529d624528abbd2b52045e1c83 |
| institution | OA Journals |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-d6d5ed529d624528abbd2b52045e1c832025-08-20T02:19:34ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422014-01-01201410.1155/2014/948708948708Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion EtchingRobert Damian Lawrowski0Christian Prommesberger1Christoph Langer2Florian Dams3Rupert Schreiner4Faculty of General Sciences and Microsystems Technology, OTH Regensburg, 93053 Regensburg, Bavaria, GermanyFaculty of General Sciences and Microsystems Technology, OTH Regensburg, 93053 Regensburg, Bavaria, GermanyFaculty of General Sciences and Microsystems Technology, OTH Regensburg, 93053 Regensburg, Bavaria, GermanyFaculty of General Sciences and Microsystems Technology, OTH Regensburg, 93053 Regensburg, Bavaria, GermanyFaculty of General Sciences and Microsystems Technology, OTH Regensburg, 93053 Regensburg, Bavaria, GermanyThe homogeneity of emitters is very important for the performance of field emission (FE) devices. Reactive-ion etching (RIE) and oxidation have significant influences on the geometry of silicon tips. The RIE influences mainly the anisotropy of the emitters. Pressure has a strong impact on the anisotropic factor. Reducing the pressure results in a higher anisotropy, but the etch rate is also lower. A longer time of etching compensates this effect. Furthermore an improvement of homogeneity was observed. The impact of uprating is quite low for the anisotropic factor, but significant for the homogeneity. At low power the height and undercut of the emitters are more constant over the whole wafer. The oxidation itself is very homogeneous and has no observable effect on further variation of the homogeneity. This modified fabrication process allows solving the problem of inhomogeneity of previous field emission arrays.http://dx.doi.org/10.1155/2014/948708 |
| spellingShingle | Robert Damian Lawrowski Christian Prommesberger Christoph Langer Florian Dams Rupert Schreiner Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching Advances in Materials Science and Engineering |
| title | Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching |
| title_full | Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching |
| title_fullStr | Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching |
| title_full_unstemmed | Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching |
| title_short | Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching |
| title_sort | improvement of homogeneity and aspect ratio of silicon tips for field emission by reactive ion etching |
| url | http://dx.doi.org/10.1155/2014/948708 |
| work_keys_str_mv | AT robertdamianlawrowski improvementofhomogeneityandaspectratioofsilicontipsforfieldemissionbyreactiveionetching AT christianprommesberger improvementofhomogeneityandaspectratioofsilicontipsforfieldemissionbyreactiveionetching AT christophlanger improvementofhomogeneityandaspectratioofsilicontipsforfieldemissionbyreactiveionetching AT floriandams improvementofhomogeneityandaspectratioofsilicontipsforfieldemissionbyreactiveionetching AT rupertschreiner improvementofhomogeneityandaspectratioofsilicontipsforfieldemissionbyreactiveionetching |