Optical Power Monitoring with Ultrahigh Sensitivity in Silicon Waveguides and Ring Resonators
We demonstrate optical power monitoring using a silicon resistor enabled by the surface and defect states-induced photoconductance effect. Ultrahigh optical power detection sensitivity of −40 dBm under a low AC drive voltage of 5 mV is obtained with the facilitation of a lock-in amplifier...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7982749/ |
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| Summary: | We demonstrate optical power monitoring using a silicon resistor enabled by the surface and defect states-induced photoconductance effect. Ultrahigh optical power detection sensitivity of −40 dBm under a low AC drive voltage of 5 mV is obtained with the facilitation of a lock-in amplifier circuitry. The detection scheme is applied to monitor the resonances in single and coupled-ring resonators. Intracavity resonance spectrum is successfully measured at both the static and the thermal tuning conditions. The demonstration opens a compelling new way for nonintrusive on-chip optical power detection by exploiting doped silicon resistor-based thermooptic heaters. |
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| ISSN: | 1943-0655 |