Effect of Implantation Temperature on the Layer Exfoliation of H-implanted Germanium

This work describes the influence of implantation temperature on the layer exfoliation of the H-implanted Ge substrate. For the implantation at RT, post-implantation annealing showed large exfoliated regions over the sample surface. Two depths of the exfoliated regions were observed with average val...

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Main Authors: U. Dadwal, Praveen Kumar, R. Singh
Format: Article
Language:English
Published: Sumy State University 2013-05-01
Series:Журнал нано- та електронної фізики
Subjects:
Online Access:http://jnep.sumdu.edu.ua/download/numbers/2013/2/articles/jnep_2013_V5_02002.pdf
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author U. Dadwal
Praveen Kumar
R. Singh
author_facet U. Dadwal
Praveen Kumar
R. Singh
author_sort U. Dadwal
collection DOAJ
description This work describes the influence of implantation temperature on the layer exfoliation of the H-implanted Ge substrate. For the implantation at RT, post-implantation annealing showed large exfoliated regions over the sample surface. Two depths of the exfoliated regions were observed with average values of about 654 and 856 nm from the top of the H-implanted surface. In the H-implanted Ge at 300 °C, exfoliation occurred in the as-implanted state in the form of surface craters. The average depth of these craters was measured to be about 890 nm from the surface. Simulation results showed that the depth of the exfoliated regions was either located near to the damage peak or away from the H-peak depending upon the implantation temperature.
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series Журнал нано- та електронної фізики
spelling doaj-art-d5f384a9ea6e4017a2587d394f0cedff2025-08-20T03:06:05ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722013-05-0152020021Effect of Implantation Temperature on the Layer Exfoliation of H-implanted GermaniumU. DadwalPraveen KumarR. SinghThis work describes the influence of implantation temperature on the layer exfoliation of the H-implanted Ge substrate. For the implantation at RT, post-implantation annealing showed large exfoliated regions over the sample surface. Two depths of the exfoliated regions were observed with average values of about 654 and 856 nm from the top of the H-implanted surface. In the H-implanted Ge at 300 °C, exfoliation occurred in the as-implanted state in the form of surface craters. The average depth of these craters was measured to be about 890 nm from the surface. Simulation results showed that the depth of the exfoliated regions was either located near to the damage peak or away from the H-peak depending upon the implantation temperature.http://jnep.sumdu.edu.ua/download/numbers/2013/2/articles/jnep_2013_V5_02002.pdfImplantationGeExfoliationAnnealin
spellingShingle U. Dadwal
Praveen Kumar
R. Singh
Effect of Implantation Temperature on the Layer Exfoliation of H-implanted Germanium
Журнал нано- та електронної фізики
Implantation
Ge
Exfoliation
Annealin
title Effect of Implantation Temperature on the Layer Exfoliation of H-implanted Germanium
title_full Effect of Implantation Temperature on the Layer Exfoliation of H-implanted Germanium
title_fullStr Effect of Implantation Temperature on the Layer Exfoliation of H-implanted Germanium
title_full_unstemmed Effect of Implantation Temperature on the Layer Exfoliation of H-implanted Germanium
title_short Effect of Implantation Temperature on the Layer Exfoliation of H-implanted Germanium
title_sort effect of implantation temperature on the layer exfoliation of h implanted germanium
topic Implantation
Ge
Exfoliation
Annealin
url http://jnep.sumdu.edu.ua/download/numbers/2013/2/articles/jnep_2013_V5_02002.pdf
work_keys_str_mv AT udadwal effectofimplantationtemperatureonthelayerexfoliationofhimplantedgermanium
AT praveenkumar effectofimplantationtemperatureonthelayerexfoliationofhimplantedgermanium
AT rsingh effectofimplantationtemperatureonthelayerexfoliationofhimplantedgermanium