Modulating contact properties by molecular layers in organic thin‐film transistors
Abstract Advanced organic devices and circuits demand both ultrahigh charge carrier mobilities and ultralow‐resistance contacts. However, due to a larger access resistance in staggered organic thin‐film transistors (OTFTs), the achievement of ultralow contact resistance (Rc) is still a challenge. Th...
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| Format: | Article |
| Language: | English |
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Wiley
2023-11-01
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| Series: | Electron |
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| Online Access: | https://doi.org/10.1002/elt2.7 |
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| _version_ | 1849422839075045376 |
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| author | Li Sun Yating Li Jiacheng Xie Liqi Zhou Peng Wang Jian‐Bin Xu Yi Shi Xinran Wang Daowei He |
| author_facet | Li Sun Yating Li Jiacheng Xie Liqi Zhou Peng Wang Jian‐Bin Xu Yi Shi Xinran Wang Daowei He |
| author_sort | Li Sun |
| collection | DOAJ |
| description | Abstract Advanced organic devices and circuits demand both ultrahigh charge carrier mobilities and ultralow‐resistance contacts. However, due to a larger access resistance in staggered organic thin‐film transistors (OTFTs), the achievement of ultralow contact resistance (Rc) is still a challenge. The modulation of contact resistance by molecular layers near the interface has been rarely reported. Here, we demonstrate that few‐layer organic single crystals are grown on hafnium oxide (HfO2) by solution‐shearing epitaxy. We utilize these organic crystals to fabricate bottom‐gate staggered OTFTs with different contact processes. The results show that the contact properties of OTFTs are obviously modulated by crystal layers. The tri‐layer (3L) evaporated‐Au C10‐DNTT OTFTs exhibit optimal electrical performance, including ultralow Rc of 5.6 Ω ∙ cm, recorded transfer length of 0.4 μm, field‐effect mobility over 14 cm2V−1s−1, threshold voltage lower than 0.3 V, and long‐term air stability over 8 months. The main cause is that the metal atoms can penetrate into the charge transport layer, with damage‐free, in 3L evaporated‐Au OTFTs; nevertheless, it cannot be realized in other cases. Due to layer stacking of conjugated molecules and polymers, our strategy can efficiently modulate the contact resistance to aid the development of high‐performance organic devices and circuits. |
| format | Article |
| id | doaj-art-d5e300d27eb84b928f53c485fe4f93e2 |
| institution | Kabale University |
| issn | 2751-2606 2751-2614 |
| language | English |
| publishDate | 2023-11-01 |
| publisher | Wiley |
| record_format | Article |
| series | Electron |
| spelling | doaj-art-d5e300d27eb84b928f53c485fe4f93e22025-08-20T03:30:53ZengWileyElectron2751-26062751-26142023-11-0112n/an/a10.1002/elt2.7Modulating contact properties by molecular layers in organic thin‐film transistorsLi Sun0Yating Li1Jiacheng Xie2Liqi Zhou3Peng Wang4Jian‐Bin Xu5Yi Shi6Xinran Wang7Daowei He8National Laboratory of Solid State Microstructures Key Lab of Optoelectronic Devices and Systems with Extreme Performances, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing ChinaNational Laboratory of Solid State Microstructures Key Lab of Optoelectronic Devices and Systems with Extreme Performances, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing ChinaNational Laboratory of Solid State Microstructures Key Lab of Optoelectronic Devices and Systems with Extreme Performances, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing ChinaNational Laboratory of Solid State Microstructures Jiangsu Key Laboratory of Artificial Functional Materials College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing ChinaDepartment of Physics University of Warwick Coventry UKDepartment of Electronic Engineering and Materials Science and Technology Research Center The Chinese University of Hong Kong Hong Kong SAR ChinaNational Laboratory of Solid State Microstructures Key Lab of Optoelectronic Devices and Systems with Extreme Performances, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing ChinaNational Laboratory of Solid State Microstructures Key Lab of Optoelectronic Devices and Systems with Extreme Performances, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing ChinaNational Laboratory of Solid State Microstructures Key Lab of Optoelectronic Devices and Systems with Extreme Performances, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing ChinaAbstract Advanced organic devices and circuits demand both ultrahigh charge carrier mobilities and ultralow‐resistance contacts. However, due to a larger access resistance in staggered organic thin‐film transistors (OTFTs), the achievement of ultralow contact resistance (Rc) is still a challenge. The modulation of contact resistance by molecular layers near the interface has been rarely reported. Here, we demonstrate that few‐layer organic single crystals are grown on hafnium oxide (HfO2) by solution‐shearing epitaxy. We utilize these organic crystals to fabricate bottom‐gate staggered OTFTs with different contact processes. The results show that the contact properties of OTFTs are obviously modulated by crystal layers. The tri‐layer (3L) evaporated‐Au C10‐DNTT OTFTs exhibit optimal electrical performance, including ultralow Rc of 5.6 Ω ∙ cm, recorded transfer length of 0.4 μm, field‐effect mobility over 14 cm2V−1s−1, threshold voltage lower than 0.3 V, and long‐term air stability over 8 months. The main cause is that the metal atoms can penetrate into the charge transport layer, with damage‐free, in 3L evaporated‐Au OTFTs; nevertheless, it cannot be realized in other cases. Due to layer stacking of conjugated molecules and polymers, our strategy can efficiently modulate the contact resistance to aid the development of high‐performance organic devices and circuits.https://doi.org/10.1002/elt2.7contact resistancemobilityorganic thin‐film transistorsingle crystal |
| spellingShingle | Li Sun Yating Li Jiacheng Xie Liqi Zhou Peng Wang Jian‐Bin Xu Yi Shi Xinran Wang Daowei He Modulating contact properties by molecular layers in organic thin‐film transistors Electron contact resistance mobility organic thin‐film transistor single crystal |
| title | Modulating contact properties by molecular layers in organic thin‐film transistors |
| title_full | Modulating contact properties by molecular layers in organic thin‐film transistors |
| title_fullStr | Modulating contact properties by molecular layers in organic thin‐film transistors |
| title_full_unstemmed | Modulating contact properties by molecular layers in organic thin‐film transistors |
| title_short | Modulating contact properties by molecular layers in organic thin‐film transistors |
| title_sort | modulating contact properties by molecular layers in organic thin film transistors |
| topic | contact resistance mobility organic thin‐film transistor single crystal |
| url | https://doi.org/10.1002/elt2.7 |
| work_keys_str_mv | AT lisun modulatingcontactpropertiesbymolecularlayersinorganicthinfilmtransistors AT yatingli modulatingcontactpropertiesbymolecularlayersinorganicthinfilmtransistors AT jiachengxie modulatingcontactpropertiesbymolecularlayersinorganicthinfilmtransistors AT liqizhou modulatingcontactpropertiesbymolecularlayersinorganicthinfilmtransistors AT pengwang modulatingcontactpropertiesbymolecularlayersinorganicthinfilmtransistors AT jianbinxu modulatingcontactpropertiesbymolecularlayersinorganicthinfilmtransistors AT yishi modulatingcontactpropertiesbymolecularlayersinorganicthinfilmtransistors AT xinranwang modulatingcontactpropertiesbymolecularlayersinorganicthinfilmtransistors AT daoweihe modulatingcontactpropertiesbymolecularlayersinorganicthinfilmtransistors |