Driving of The Parameters Of GaAs:Si p-n-Structures by Giratronic Irradiation
It is shown that by using giratronic irradiation it is possibility to control the p-n junction in an already fabricated light-emitting structure. Shift compensated field emitting structure based on GaAs:Si, due to the motion of impurities in the field of thermoelastic stresses appearing during cooli...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2011-01-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/4/articles/jnep_2011_V3_N4_138-149.pdf |
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