A Perovskite-Based Photoelectric Synaptic Transistor with Dynamic Nonlinear Response
Nonlinear characteristics are essential for neuromorphic devices to process high-dimensional and unstructured data. However, enabling a device to realize a nonlinear response under the same stimulation condition is challenging as this involves two opposing processes: simultaneous charge accumulation...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-07-01
|
| Series: | Photonics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2304-6732/12/7/734 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849732963063824384 |
|---|---|
| author | Jiahui Liu Zunxian Yang Yujie Zheng Wenkun Su |
| author_facet | Jiahui Liu Zunxian Yang Yujie Zheng Wenkun Su |
| author_sort | Jiahui Liu |
| collection | DOAJ |
| description | Nonlinear characteristics are essential for neuromorphic devices to process high-dimensional and unstructured data. However, enabling a device to realize a nonlinear response under the same stimulation condition is challenging as this involves two opposing processes: simultaneous charge accumulation and recombination. In this study, a hybrid transistor based on a mixed-halide perovskite was fabricated to achieve dynamic nonlinear changes in synaptic plasticity. The utilization of a light-induced mixed-bandgap structure within the mixed perovskite film has been demonstrated to increase the recombination paths of photogenerated carriers of the hybrid film, thereby promoting the formation of nonlinear signals in the device. The constructed heterojunction optoelectronic synaptic transistor, formed by combining a mixed-halide perovskite with a p-type semiconductor, generates dynamic nonlinear decay responses under 400 nm light pulses with an intensity as low as 0.02 mW/cm<sup>2</sup>. Furthermore, it has been demonstrated that nonlinear photocurrent growth can be achieved under 650 nm light pulses. It is important to note that this novel nonlinear response is characterized by its dynamism. These improvements provide a novel method for expanding the modulation capability of optoelectronic synaptic devices for synaptic plasticity. |
| format | Article |
| id | doaj-art-d570ecd87f2a40ad80b3e9a7190c9441 |
| institution | DOAJ |
| issn | 2304-6732 |
| language | English |
| publishDate | 2025-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Photonics |
| spelling | doaj-art-d570ecd87f2a40ad80b3e9a7190c94412025-08-20T03:08:10ZengMDPI AGPhotonics2304-67322025-07-0112773410.3390/photonics12070734A Perovskite-Based Photoelectric Synaptic Transistor with Dynamic Nonlinear ResponseJiahui Liu0Zunxian Yang1Yujie Zheng2Wenkun Su3College of Information Science and Engineering, Huaqiao University, Xiamen 361021, ChinaNational & Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou 350108, ChinaCollege of Information Science and Engineering, Huaqiao University, Xiamen 361021, ChinaCollege of Information Science and Engineering, Huaqiao University, Xiamen 361021, ChinaNonlinear characteristics are essential for neuromorphic devices to process high-dimensional and unstructured data. However, enabling a device to realize a nonlinear response under the same stimulation condition is challenging as this involves two opposing processes: simultaneous charge accumulation and recombination. In this study, a hybrid transistor based on a mixed-halide perovskite was fabricated to achieve dynamic nonlinear changes in synaptic plasticity. The utilization of a light-induced mixed-bandgap structure within the mixed perovskite film has been demonstrated to increase the recombination paths of photogenerated carriers of the hybrid film, thereby promoting the formation of nonlinear signals in the device. The constructed heterojunction optoelectronic synaptic transistor, formed by combining a mixed-halide perovskite with a p-type semiconductor, generates dynamic nonlinear decay responses under 400 nm light pulses with an intensity as low as 0.02 mW/cm<sup>2</sup>. Furthermore, it has been demonstrated that nonlinear photocurrent growth can be achieved under 650 nm light pulses. It is important to note that this novel nonlinear response is characterized by its dynamism. These improvements provide a novel method for expanding the modulation capability of optoelectronic synaptic devices for synaptic plasticity.https://www.mdpi.com/2304-6732/12/7/734photoelectric synaptic transistorsmixed-halide perovskitemixed bandgapsnonlinear response |
| spellingShingle | Jiahui Liu Zunxian Yang Yujie Zheng Wenkun Su A Perovskite-Based Photoelectric Synaptic Transistor with Dynamic Nonlinear Response Photonics photoelectric synaptic transistors mixed-halide perovskite mixed bandgaps nonlinear response |
| title | A Perovskite-Based Photoelectric Synaptic Transistor with Dynamic Nonlinear Response |
| title_full | A Perovskite-Based Photoelectric Synaptic Transistor with Dynamic Nonlinear Response |
| title_fullStr | A Perovskite-Based Photoelectric Synaptic Transistor with Dynamic Nonlinear Response |
| title_full_unstemmed | A Perovskite-Based Photoelectric Synaptic Transistor with Dynamic Nonlinear Response |
| title_short | A Perovskite-Based Photoelectric Synaptic Transistor with Dynamic Nonlinear Response |
| title_sort | perovskite based photoelectric synaptic transistor with dynamic nonlinear response |
| topic | photoelectric synaptic transistors mixed-halide perovskite mixed bandgaps nonlinear response |
| url | https://www.mdpi.com/2304-6732/12/7/734 |
| work_keys_str_mv | AT jiahuiliu aperovskitebasedphotoelectricsynaptictransistorwithdynamicnonlinearresponse AT zunxianyang aperovskitebasedphotoelectricsynaptictransistorwithdynamicnonlinearresponse AT yujiezheng aperovskitebasedphotoelectricsynaptictransistorwithdynamicnonlinearresponse AT wenkunsu aperovskitebasedphotoelectricsynaptictransistorwithdynamicnonlinearresponse AT jiahuiliu perovskitebasedphotoelectricsynaptictransistorwithdynamicnonlinearresponse AT zunxianyang perovskitebasedphotoelectricsynaptictransistorwithdynamicnonlinearresponse AT yujiezheng perovskitebasedphotoelectricsynaptictransistorwithdynamicnonlinearresponse AT wenkunsu perovskitebasedphotoelectricsynaptictransistorwithdynamicnonlinearresponse |