A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE
A quantum well optoelectronic switch (QWOES) based on regenerative loop of potential barrier lowering resulted from the forward biased pn junction is demonstrated in a AlGaAs/GaAs/InGaAs double heterostructure. Excellent electrical switching characteristics with a high voltage control efficiency η(=...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Wiley
2001-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/APEC.23.231 |
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| _version_ | 1850174481636524032 |
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| author | Ming Rong Lee K. F. Yarn W. R. Chang |
| author_facet | Ming Rong Lee K. F. Yarn W. R. Chang |
| author_sort | Ming Rong Lee |
| collection | DOAJ |
| description | A quantum well optoelectronic switch (QWOES) based on regenerative loop of potential
barrier lowering resulted from the forward biased pn junction is demonstrated in a
AlGaAs/GaAs/InGaAs double heterostructure. Excellent electrical switching characteristics
with a high voltage control efficiency η(= VS/VH) of 6.8 have been obtained when the device is operated in the dark. Typical OFF-and ON-state resistances are 120 kΩ, 25 Ω, respectively. A lasing threshold current density, front slope efficiency and external differential quantum efficiency measured in as-cleaved device are 210 A/cm, 0.4mW/mA and 31.4%, respectively. The peak emission wavelength is centered at about 974 nm. |
| format | Article |
| id | doaj-art-d56f8b47bfe3461c964fb1659e543dc2 |
| institution | OA Journals |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2001-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-d56f8b47bfe3461c964fb1659e543dc22025-08-20T02:19:38ZengWileyActive and Passive Electronic Components0882-75161563-50312001-01-0123423123610.1155/APEC.23.231A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBEMing Rong Lee0K. F. Yarn1W. R. Chang2Far East College, Department of Electrical Engineering, Optoelectronic Semiconductor Center, Hsin-Shih, Tainan, Taiwan 744, ChinaFar East College, Department of Electrical Engineering, Optoelectronic Semiconductor Center, Hsin-Shih, Tainan, Taiwan 744, ChinaFar East College, Department of Electrical Engineering, Optoelectronic Semiconductor Center, Hsin-Shih, Tainan, Taiwan 744, ChinaA quantum well optoelectronic switch (QWOES) based on regenerative loop of potential barrier lowering resulted from the forward biased pn junction is demonstrated in a AlGaAs/GaAs/InGaAs double heterostructure. Excellent electrical switching characteristics with a high voltage control efficiency η(= VS/VH) of 6.8 have been obtained when the device is operated in the dark. Typical OFF-and ON-state resistances are 120 kΩ, 25 Ω, respectively. A lasing threshold current density, front slope efficiency and external differential quantum efficiency measured in as-cleaved device are 210 A/cm, 0.4mW/mA and 31.4%, respectively. The peak emission wavelength is centered at about 974 nm.http://dx.doi.org/10.1155/APEC.23.231 |
| spellingShingle | Ming Rong Lee K. F. Yarn W. R. Chang A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE Active and Passive Electronic Components |
| title | A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE |
| title_full | A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE |
| title_fullStr | A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE |
| title_full_unstemmed | A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE |
| title_short | A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE |
| title_sort | new algaas gaas ingaas lasing switch grown by mbe |
| url | http://dx.doi.org/10.1155/APEC.23.231 |
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