A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE
A quantum well optoelectronic switch (QWOES) based on regenerative loop of potential barrier lowering resulted from the forward biased pn junction is demonstrated in a AlGaAs/GaAs/InGaAs double heterostructure. Excellent electrical switching characteristics with a high voltage control efficiency η(=...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2001-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/APEC.23.231 |
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| Summary: | A quantum well optoelectronic switch (QWOES) based on regenerative loop of potential
barrier lowering resulted from the forward biased pn junction is demonstrated in a
AlGaAs/GaAs/InGaAs double heterostructure. Excellent electrical switching characteristics
with a high voltage control efficiency η(= VS/VH) of 6.8 have been obtained when the device is operated in the dark. Typical OFF-and ON-state resistances are 120 kΩ, 25 Ω, respectively. A lasing threshold current density, front slope efficiency and external differential quantum efficiency measured in as-cleaved device are 210 A/cm, 0.4mW/mA and 31.4%, respectively. The peak emission wavelength is centered at about 974 nm. |
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| ISSN: | 0882-7516 1563-5031 |